Semiconductor device and method for manufacturing the same

ABSTRACT

A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and a metal film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in a manner such that oxygen is introduced into the insulating layer and the metal film from a position above the metal film. Thus, a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the metal film is oxidized to form a metal oxide film. Further, resistivity of the metal oxide film is greater than or equal to 1×10 10  Ωm and less than or equal to 1×10 19  Ωm.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention disclosed in this specification relates to a semiconductor device and a method for manufacturing the semiconductor device.

In this specification and the like, a semiconductor device refers to all types of devices which can function by utilizing semiconductor characteristics; an electro-optical device, a light-emitting display device, a semiconductor circuit, and an electronic device are all semiconductor devices.

2. Description of the Related Art

A technique by which transistors are formed using semiconductor thin films formed over a substrate having an insulating surface has been attracting attention. The transistor is applied to a wide range of semiconductor devices such as an integrated circuit (IC) and an image display device (also simply referred to as display device). A silicon-based semiconductor material is widely known as a material for a semiconductor thin film applicable to a transistor. As another material, an oxide semiconductor has been attracting attention.

For example, a technique in which a transistor is manufactured using a zinc oxide or an In—Ga—Zn-based oxide as an oxide semiconductor is disclosed (see Patent Documents 1 and 2).

Meanwhile, it has been pointed out that when hydrogen enters an oxide semiconductor, a donor is generated at a level close to the conduction band (a shallow level), and the oxide semiconductor becomes an n-type oxide semiconductor. Therefore, some measures need to be taken to prevent hydrogen from entering the oxide semiconductor at the time of depositing the oxide semiconductor. Further, the following technique is also disclosed: fluctuation of a threshold voltage is suppressed by reducing the amount of hydrogen contained in not only the oxide semiconductor but also a gate insulating film in contact with the oxide semiconductor (see Patent Document 3).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.     2007-123861 -   [Patent Document 2] Japanese Published Patent Application No.     2007-096055

[Patent Document 3] Japanese Published Patent Application No. 2009-224479 SUMMARY OF THE INVENTION

Further, an oxygen vacancy in an oxide semiconductor serves as donor to generate an electron that serves as a carrier in the oxide semiconductor. When many oxygen vacancies exist in an oxide semiconductor including a channel formation region of a transistor, electrons are generated in the channel formation region, which is a cause of shift of the threshold voltage of the transistor in the negative direction.

In view of the aforementioned problem, an object of one embodiment of the present invention is to provide a method for manufacturing a highly reliable semiconductor device including an oxide semiconductor and having stable electric characteristics.

In a method for manufacturing a semiconductor device which includes a bottom-gate transistor including an oxide semiconductor layer, an insulating layer is formed to be in contact with the oxide semiconductor layer, and a metal film is stacked over the insulating layer. Oxygen doping treatment is performed in a manner such that oxygen is introduced into the insulating layer and the metal film from a position above the metal film. Thus, the metal film is oxidized to form a metal oxide film.

The metal oxide film formed by the oxygen doping treatment preferably has a resistivity ρ greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹ Ωm, further preferably greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁸ Ωm, still further preferably greater than or equal to 1×10¹¹ Ωm and less than or equal to 1×10¹⁵ Ωm. When the metal oxide film has resistivity in the above range, the transistor can be prevented from being damaged by electrostatic discharge.

As the metal oxide film, a film having barrier properties, i.e., having a high shielding effect (blocking effect) of preventing penetration of both oxygen and impurities such as hydrogen and moisture, is used. For example, an aluminum oxide film is preferably employed for the metal oxide film. Alternatively, a titanium oxide film or a magnesium oxide film may be stacked over the aluminum oxide film. With the metal oxide film having barrier properties provided over the oxide semiconductor layer, in and after the manufacturing process of the transistor, entry of impurities such as hydrogen or moisture into the oxide semiconductor layer, which cause a change in characteristics, can be prevented, and release (elimination) of oxygen that is a main component of an oxide semiconductor from the oxide semiconductor layer can also be prevented. Therefore, reliability of the transistor can be improved.

Note that in the case where as the metal oxide film, a stacked film of an aluminum oxide film and a titanium oxide film is used, the titanium oxide film provided over the aluminum oxide film can be formed in such a manner that a titanium film is stacked on an aluminum film and oxygen is introduced (oxygen dopant is performed) from a position above the titanium film. Like the above case, in the case where as the metal oxide film, a stacked film of an aluminum oxide film and a magnesium oxide film is used, the magnesium oxide film provided over the aluminum oxide film can be formed in such a manner that a magnesium film is stacked on an aluminum film and oxygen is introduced (oxygen dopant is performed) from a position above the magnesium film.

Further, in the case where a composition of the aluminum oxide film is represented by Al₂O_(x), x is preferably greater than or equal to 1 and less than or equal to 3.5.

The oxygen doping treatment performed on the metal film can also allow oxygen to be added to the insulating layer which is in contact with the metal film. The insulating layer to which oxygen is added at least partly includes a region containing oxygen in excess of the stoichiometric composition thereof (hereinafter, the region is referred to as an oxygen excess region). When the insulating layer in contact with the oxide semiconductor layer includes an oxygen excess region, oxygen can be supplied to the oxide semiconductor layer, so that oxygen can be prevented from being eliminated from the oxide semiconductor layer, and accordingly oxygen vacancies in the layer can be filled.

It is preferable that the insulating layer in contact with the oxide semiconductor layer (an example of such an insulating layer is an insulating layer or a gate insulating layer) contain impurities such as water or hydrogen as little as possible. If the insulating layer in contact with the oxide semiconductor layer contains hydrogen, the hydrogen might enter the oxide semiconductor layer or might extract oxygen in the oxide semiconductor layer. Thus, the insulating layer in contact with the oxide semiconductor layer is preferably a film which is subjected to heat treatment for dehydration or dehydrogenation.

One embodiment of the present invention is a semiconductor device including a gate electrode layer, a gate insulating layer provided over the gate electrode layer, an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween, a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer, an insulating layer which is provided over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer, and a metal oxide film provided over and in contact with the insulating layer. In the semiconductor device, the metal oxide film has a resistivity greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹Ωm.

Another embodiment of the present invention is a semiconductor device including a gate electrode layer, a gate insulating layer provided over the gate electrode layer, an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween, a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer, an insulating layer which is provided over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer, and a metal oxide film provided over and in contact with the insulating layer. In the semiconductor device, the metal oxide film has a resistivity greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹ Ωm, and the insulating layer includes a region containing oxygen in excess of a stoichiometric composition.

In the above semiconductor device, as the metal oxide film, an aluminum oxide film is preferably provided.

Another embodiment of the present invention is a semiconductor device including a gate electrode layer over an insulating surface, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, an island-shaped stacked layer which is provided over the oxide semiconductor layer to overlap with the gate electrode layer and which includes an insulating layer in contact with the oxide semiconductor layer and an aluminum oxide film provided over the insulating layer, and a source electrode layer and a drain electrode layer which are provided over the oxide semiconductor layer, the insulating layer, and the aluminum oxide film and electrically connected to the oxide semiconductor layer.

Another embodiment of the present invention is a semiconductor device including a gate electrode layer over an insulating surface, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, a stacked layer which is provided over the oxide semiconductor layer to overlap with the gate electrode layer and which includes an insulating layer in contact with the oxide semiconductor layer and an aluminum oxide film provided over the insulating layer, and a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer. In the semiconductor device, the source electrode layer and the drain electrode layer are provided in openings which are provided in the insulating layer and the aluminum oxide film and reach the oxide semiconductor layer, and a peripheral portion of the oxide semiconductor layer is covered with the insulating layer and the aluminum oxide film.

Another embodiment of the present invention is a method for manufacturing a semiconductor device including the following steps of: forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer in a region overlapping with the gate electrode layer with the gate insulating layer interposed therebetween; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer; forming an insulating layer which is over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer; forming a metal film in contact with the insulating layer; performing an oxygen doping treatment on the insulating layer and the meal film, so that oxygen is added to the insulating layer and the metal film is processed to be a metal oxide film having a resistivity greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹ Ωm.

In the above method for manufacturing a semiconductor device, before the metal film is formed, heat treatment is preferably performed on the insulating layer, so that water or hydrogen in the insulating layer is reduced.

Further, in the above method for manufacturing a semiconductor device, an aluminum film is preferably formed as the metal film, and the aluminum film is preferably processed to be an aluminum oxide film by the oxygen doping treatment.

In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the aluminum oxide film stacked over the insulating layer is a film obtained in such a manner that an aluminum film is formed and then oxidized by the oxygen doping treatment. Formation of an aluminum oxide film by oxidation of an aluminum film can increase productivity as compared with the case where an aluminum oxide film is deposited by a sputtering method. Further, the aluminum film can be doped with oxygen in the same step as oxygen doping treatment performed on the insulating layer. Therefore, the aluminum oxide film can be formed without an additional step for oxidizing the aluminum film.

Note that the above-described “oxygen doping” means that oxygen (which contains at least one of an oxygen radical, an oxygen atom, an oxygen molecule, ozone, an oxygen ion (oxygen molecular ion), and/or an oxygen cluster ion) is added to a bulk. Note that the term “bulk” is used in order to clarify that oxygen is added not only to a surface of a thin film but also to the inside of the thin film. In addition, “oxygen doping” includes “oxygen plasma doping” in which oxygen which is made to be plasma is added to a bulk

For the oxygen doping treatment, a gas containing oxygen can be used. As the gas containing oxygen, oxygen, dinitrogen monoxide, nitrogen dioxide, carbon dioxide, carbon monoxide, or the like can be used. Further, a rare gas may be included in the gas containing oxygen for the oxygen doping treatment.

By the above oxygen doping treatment, the metal film is oxidized, so that a metal oxide film functioning as a barrier film of a transistor can be formed. Further, at least one oxygen excess region where contained oxygen exceeds the stoichiometric composition is provided in a bulk of the insulating layer or at an interface between the insulating layer and the metal oxide film.

Another embodiment of the present invention is a method for manufacturing a semiconductor device including the following steps of: forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer in a region overlapping with the gate electrode layer with the gate insulating layer interposed therebetween; forming an insulating layer over and in contact with the oxide semiconductor layer overlapping with the gate electrode layer; forming an aluminum film in contact with the insulating layer; performing an oxygen doping treatment on the aluminum film and the insulating layer, so that oxygen is added to the insulating layer and the aluminum film is processed to be an aluminum oxide film; forming openings in the insulating layer and the aluminum oxide film, after the oxygen doping treatment, to reach the oxide semiconductor layer; and forming a source electrode layer and a drain electrode layer in the openings to be electrically connected to the oxide semiconductor layer.

Another embodiment of the present invention is a method for manufacturing a semiconductor device including the following steps of: forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer in a region overlapping with the gate electrode layer with the gate insulating layer interposed therebetween; forming an insulating layer over and in contact with the oxide semiconductor layer overlapping with the gate electrode layer; performing a heat treatment on the insulating layer to remove water or hydrogen in the insulating layer; forming an aluminum film which is in contact with the insulating layer from which water or hydrogen is removed; performing an oxygen doping treatment on the aluminum film and the insulating layer, so that oxygen is added to the insulating layer and the aluminum film is processed to be an aluminum oxide film; forming openings in the insulating layer and the aluminum oxide film, after the oxygen doping treatment, to reach the oxide semiconductor layer; and forming a source electrode layer and a drain electrode layer in the openings to be electrically connected to the oxide semiconductor layer.

In the above method for manufacturing a semiconductor device, a heat treatment is preferably performed after the oxygen doping treatment, so that oxygen is supplied from the insulating layer to the oxide semiconductor layer.

One embodiment of the present invention relates to a semiconductor device including a transistor or a semiconductor device including a circuit which is formed with a transistor. For example, one embodiment of the present invention relates to a semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor or a semiconductor device including a circuit which is formed with such a transistor. For example, one embodiment of the present invention relates to an LSI, a CPU, a power device mounted in a power circuit, a semiconductor integrated circuit including a memory, a thyristor, a converter, an image sensor, or the like, an electro-optical device typified by a liquid crystal display panel, a light-emitting display device including a light-emitting element, or an electronic device including the aforementioned device as a component.

According to one embodiment of the present invention, a highly reliable semiconductor device which includes an oxide semiconductor and achieves stable electric characteristics can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are a plan view and cross-sectional views illustrating one embodiment of a semiconductor device.

FIGS. 2A to 2F are cross-sectional views illustrating one embodiment of a method for manufacturing a semiconductor device.

FIGS. 3A to 3C are a plan view and cross-sectional views illustrating one embodiment of a method for manufacturing a semiconductor device.

FIGS. 4A to 4C are plan views each illustrating one embodiment of a semiconductor device.

FIGS. 5A and 5B are a plan view and a cross-sectional view illustrating one embodiment of a semiconductor device.

FIGS. 6A and 6B are cross-sectional views each illustrating one embodiment of a semiconductor device.

FIGS. 7A and 7B are a circuit diagram and a cross-sectional view illustrating one embodiment of a semiconductor device.

FIGS. 8A to 8C illustrate electronic devices.

FIGS. 9A to 9C illustrate an electronic device.

FIGS. 10A to 10C are a plan view and cross-sectional views illustrating one embodiment of a semiconductor device.

FIGS. 11A to 11E are cross-sectional views illustrating one embodiment of a method for manufacturing a semiconductor device.

FIGS. 12A and 12B are a plan view and a cross-sectional view illustrating one embodiment of a semiconductor device.

FIG. 13 is a cross-sectional view illustrating one embodiment of a semiconductor device.

FIG. 14 is a cross-sectional view illustrating one embodiment of a semiconductor device.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the invention disclosed in this specification will be described with reference to the accompanying drawings. Note that the invention disclosed in this specification is not limited to the following description, and it is easily understood by those skilled in the art that modes and details of the invention can be modified in various ways. Therefore, the invention disclosed in this specification is not construed as being limited to the description of the following embodiments. Note that in structures of the present invention described below, like portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. Further, the same hatching pattern is applied to portions having similar functions, and the portions are not especially denoted by reference numerals in some cases.

In this specification, ordinal numbers such as “first”, “second”, and “third” are used in order to avoid confusion among components, and the terms do not limit the components numerically.

Embodiment 1

In this embodiment, one embodiment of a semiconductor device and one embodiment of a manufacturing method of the semiconductor device are described with reference to FIGS. 1A to 1C and FIGS. 2A to 2F. In this embodiment, a transistor including an oxide semiconductor layer is shown as an example of the semiconductor device.

FIGS. 1A to 1C illustrate a structure example of a transistor 420. FIG. 1A is a plan view of the transistor 420, FIG. 1B is a cross-sectional view taken along line X1-Y1 in FIG. 1A, and FIG. 1C is a cross-sectional view taken along line V1-W1 in FIG. 1A. Note that some components of the transistor 420 (e.g., a metal oxide film 417, and the like) are omitted in FIG. 1A in order to avoid complexity.

The transistor 420 illustrated in FIGS. 1A to 1C includes a gate electrode layer 401 provided over the substrate 400, a gate insulating layer 402 provided over the gate electrode layer 401, an oxide semiconductor layer 403 overlapping with the gate electrode layer 401 with the gate insulating layer 402 interposed therebetween, a source electrode layer 405 a and a drain electrode layer 405 b which are electrically connected to the oxide semiconductor layer 403, an insulating layer 416 which covers the source electrode layer 405 a and the drain electrode layer 405 b and is in contact with the oxide semiconductor layer 403, and a metal oxide film 417 provided over the insulating layer 416.

As the metal oxide film 417, a film having barrier properties, i.e., having a high shielding effect (blocking effect) of preventing penetration of both oxygen and impurities such as hydrogen and moisture, is used. For example, as the metal oxide film, an aluminum oxide film, an aluminum oxide film to which magnesium is added, or an aluminum oxide film to which titanium is added can be used. Alternatively, the metal oxide film may have a stacked structure. For example, a stacked structure of an aluminum oxide film and a titanium oxide film, a stacked structure of an aluminum oxide film and a magnesium oxide film, a stacked structure of an aluminum oxide film and a nickel oxide film, a stacked structure of an aluminum oxide film and a molybdenum oxide film, a stacked structure of an aluminum oxide film and a tungsten oxide film, or the like can be employed. Note that in the case where a stacked structure including an aluminum oxide film is provided as the metal oxide film, there is no particularly limitation on the stacking order.

When the metal oxide film 417 having barrier properties is formed over the oxide semiconductor layer, in and after the manufacturing process of the transistor, entry of impurities such as hydrogen or moisture into the oxide semiconductor layer, which cause a change in characteristics, can be prevented, and release (elimination) of oxygen that is a main component of an oxide semiconductor from the oxide semiconductor layer can also be prevented. Therefore, reliability of the transistor can be improved. Further, in the transistor 420, a sidewall of the oxide semiconductor layer 403 is covered with the source electrode layer 405 a or the drain electrode layer 405 b formed using a conductive layer or covered with a stacked film of the insulating layer 416 including an oxygen excess region and the metal oxide film 417. Thus, also at the sidewall of the oxide semiconductor layer 403, oxygen can be prevented from being released.

The metal oxide film 417 preferably has resistivity ρ greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹ Ωm, further preferably greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁸ Ωm, still further preferably greater than or equal to 1×10¹¹ Ωm and less than or equal to 1×10¹⁵ Ωm. When the metal oxide film 417 has resistivity in the above range, the transistor 420 can be prevented from being damaged by electrostatic discharge. In particular, a transistor including an oxide semiconductor layer has a possibility that electric characteristics of the transistor may fluctuate significantly by the influence of static electricity and deviate from the designed range. Thus, in the transistor 420, to provide a metal oxide film having resistivity ρ in the above range is effective.

In this embodiment, an example in which an aluminum oxide film is included as the metal oxide film 417 is described.

Note that an insulating layer 422 provided over the metal oxide film 417 and a planarization insulating layer 424 provided over the insulating layer 422 may be included as components of the transistor 420.

The transistor 420 described in this embodiment includes the gate electrode layer 401 in which a gate electrode layer 401 a, a gate electrode layer 401 b, and a gate electrode layer 401 c are stacked in this order over the substrate 400. However, one embodiment of the present invention is not limited to the above structure, and the gate electrode layer may have a single-layer structure or a stacked structure including two layers or four or more layers.

Further, the transistor 420 described in this embodiment includes the gate insulating layer 402 in which a gate insulating layer 402 a and a gate insulating layer 402 b are stacked in this order over the gate electrode layer 401. However, one embodiment of the present invention is not limited to the above structure, and the gate insulating layer may have a single-layer structure or a stacked structure including three or more layers.

In the transistor 420 described in this embodiment, the insulating layer 416 in contact with the oxide semiconductor layer 403 is an insulating layer having a single-layer structure or a stacked structure and being subjected to oxygen doping treatment to include a region containing oxygen in excess of the stoichiometric composition.

In this embodiment, the aluminum oxide film that is a metal oxide film provided over and in contact with the insulating layer 416 is a film obtained by oxidizing a metal film (corresponding to an aluminum film in this embodiment). When the metal oxide film 417 is formed by oxidizing the metal film, productivity can be increased as compared with the case where the metal oxide film 417 is deposited by a sputtering method. Further, oxidization of the metal film can be performed in the same step as oxygen doping treatment performed on the insulating layer 416; thus, an additional step for oxidizing a metal film is not needed, and a process can be simplified. Therefore, cost for manufacturing a semiconductor device can be reduced.

The aluminum oxide film has a high shielding effect (blocking effect) of preventing penetration of both oxygen and impurities such as hydrogen or moisture. Thus, with use of the metal oxide film including an aluminum oxide film as an insulating layer covering the transistor, release of oxygen from the oxide semiconductor layer 403 and the insulating layer 416 in contact with the oxide semiconductor layer 403 can be prevented, and entry of water and hydrogen into the oxide semiconductor layer 403 can also be prevented.

Note that the aluminum oxide film preferably has a high density (film density higher than or equal to 3.2 g/cm³, preferably higher than or equal to 3.6 g/cm³), whereby the transistor 420 can have stable electrical characteristics. The film density can be measured by Rutherford backscattering spectrometry (RBS) or X-ray reflection (XRR).

It is preferable that the oxide semiconductor layer 403 be the one which is highly purified and hardly contains impurities such as copper, aluminum, and chlorine. In the process for manufacturing the transistor, steps in which these impurities are neither taken into the oxide semiconductor layer nor attached to the surface of the oxide semiconductor layer are preferably selected as appropriate. In the case where the impurities are attached to the surface of the oxide semiconductor layer, the impurities on the surface of the oxide semiconductor layer are preferably removed by exposure to oxalic acid or dilute hydrofluoric acid or plasma treatment (such as N₂O plasma treatment). Specifically, the copper concentration of the oxide semiconductor layer is lower than or equal to 1×10¹⁸ atoms/cm³, preferably lower than or equal to 1×10¹⁷ atoms/cm³. In addition, the aluminum concentration of the oxide semiconductor layer is lower than or equal to 1×10¹⁸ atoms/cm³. Further, the chlorine concentration of the oxide semiconductor layer is lower than or equal to 2×10¹⁸ atoms/cm³.

Further, it is preferable that the oxide semiconductor layer 403 be the one from which impurities such as water or hydrogen are removed as much as possible. For example, in the transistor 420, the hydrogen concentration contained in the oxide semiconductor layer 403 is preferably lower than or equal to 2×10¹⁹ atoms/cm³, further preferably lower than or equal to 5×10¹⁸ atoms/cm³, further preferably lower than or equal to 2×10¹⁸ atoms/cm³.

An example of a method for manufacturing the transistor 420 shown in FIGS. 1A to 1C is described with reference to FIGS. 2A to 2F.

First, the gate electrode layer 401 is formed over the substrate 400 having an insulating surface, and then, the gate insulating layer 402 a and the gate insulating layer 402 b are stacked in this order over the gate electrode layer 401, whereby the gate insulating layer 402 is formed (see FIG. 2A).

There is no particular limitation on a substrate that can be used as the substrate 400 having an insulating surface as long as it has heat resistance high enough to withstand heat treatment performed later. For example, a variety of glass substrates for electronics industry, such as a barium borosilicate glass substrate or an aluminoborosilicate glass substrate can be used. Note that as the substrate, a substrate having a thermal expansion coefficient of greater than or equal to 25×10⁻⁷/° C. and less than or equal to 50×10⁻⁷/° C. (preferably greater than or equal to 30×10⁻⁷/° C. and less than or equal to 40×10⁻⁷/° C.) and a strain point of higher than or equal to 650° C. and lower than or equal to 750° C. (preferably higher than or equal to 700° C. and lower than or equal to 740° C.) is preferably used.

In the case where a large-sized substrate having the size of the fifth generation (1000 mm×1200 mm or 1300 mm×1500 mm), the sixth generation (1500 mm×1800 mm), the seventh generation (1870 mm×2200 mm), the eighth generation (2200 mm×2500 mm), the ninth generation (2400 mm×2800 mm), the tenth generation (2880 mm×3130 mm), or the like is used, minute processing might become difficult owing to shrinkage of the substrate caused by heat treatment or the like in the manufacturing process of a semiconductor device. Therefore, when such a large-sized glass substrate is used as the substrate, the one with a small shrinkage is preferably used. For example, a large-sized glass substrate which has a shrinkage of 20 ppm or less, preferably 10 ppm or less, further preferably 5 ppm or less after heat treatment preferably at 450° C., further preferably 500° C. for one hour may be used as the substrate.

As the substrate 400, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like can be used. Alternatively, a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium or the like, an SOI substrate, or the like can be used. Still alternatively, any of these substrates over which a semiconductor element is provided may be used.

The semiconductor device may be manufactured using a flexible substrate as the substrate 400. To manufacture a flexible semiconductor device, the transistor 420 including the oxide semiconductor layer 403 may be directly formed over a flexible substrate; or alternatively, the transistor 420 including the oxide semiconductor layer 403 may be formed over a manufacturing substrate and then separated and transferred to a flexible substrate. Note that in order to separate the transistor 420 from the manufacturing substrate and transfer it to the flexible substrate, a separation layer may be provided between the manufacturing substrate and the transistor 420 including the oxide semiconductor layer.

Over the substrate 400, a base insulating layer may be provided. The base insulating layer can be formed by a plasma CVD method, a sputtering method, or the like using an oxide insulating film such as a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum oxynitride film, a hafnium oxide film, or a gallium oxide film; a nitride insulating film such as a silicon nitride film, a silicon nitride oxide film, an aluminum nitride film, or an aluminum nitride oxide film; or a mixed material thereof.

The substrate 400 (or the substrate 400 and the base insulating layer) may be subjected to heat treatment. For example, the heat treatment may be performed with a gas rapid thermal annealing (GRTA) apparatus, in which heat treatment is performed using a high-temperature gas, at 650° C. for 1 minute to 5 minutes. As the high-temperature gas for GRTA, an inert gas which does not react with an object to be processed by heat treatment, such as nitrogen or a rare gas like argon, is used. Alternatively, the heat treatment may be conducted with an electric furnace at 500° C. for 30 minutes to one hour.

The gate electrode layer 401 can be formed using a metal material such as molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, or scandium or an alloy material which contains any of these materials as its main component. A semiconductor film which is doped with an impurity element such as phosphorus and is typified by a polycrystalline silicon film or a silicide film of nickel silicide or the like can also be used as the gate electrode layer 401. The gate electrode layer 401 has either a single-layer structure or a stacked-layer structure.

The gate electrode layer 401 can also be formed using a conductive material such as indium oxide-tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium oxide-zinc oxide, or indium tin oxide to which silicon oxide is added. It is also possible that the gate electrode layer 401 has a stacked structure of the above conductive material and the above metal material. For example, a stacked structure in which a titanium nitride film, a copper thin film, and a molybdenum film are stacked in this order over the substrate 400, or a stacked structure of a titanium film and a copper thin film can be employed.

As the gate electrode layer 401, a metal oxide film containing nitrogen, specifically, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Ga—O film containing nitrogen, an In—Zn—O film containing nitrogen, a Sn—O film containing nitrogen, an In—O film containing nitrogen, or a metal nitride (e.g., InN or SnN) film can be used. These films each have a work function of 5 eV (electron volts) or higher, preferably 5.5 eV or higher, which enables the threshold voltage of electric characteristics of the transistor to be positive when used as the gate electrode layer. Accordingly, a so-called normally-off switching element can be obtained.

In this embodiment, as the gate electrode layer 401 b, a copper layer with a thickness greater than or equal to 100 nm and less than or equal to 400 nm is formed. In addition, the gate electrode layer 401 a and the gate electrode layer 401 c functioning as a barrier metal for preventing diffusion of copper are formed to be in contact with an upper surface and a lower surface of the gate electrode layer 401 b. As the gate electrode layer 401 a, for example, a tantalum nitride layer with a thickness greater than or equal to 20 nm and less than or equal to 50 nm can be formed. As the gate electrode layer 401 c, for example, a molybdenum layer with a thickness greater than or equal to 50 nm and less than or equal to 200 nm can be formed.

The substrate 400 and the gate electrode layer 401 may be subjected to heat treatment after the gate electrode layer 401 is formed. For example, the heat treatment may be conducted with a GRTA apparatus at 650° C. for 1 minute to 5 minutes. Alternatively, the heat treatment may be conducted with an electric furnace at 500° C. for 30 minutes to 1 hour.

To improve the coverage with the gate insulating layer 402, planarization treatment may be performed on a surface of the gate electrode layer 401. It is preferable that the flatness of the surface of the gate electrode layer 401 be good particularly when the thickness of the gate insulating layer 402 is small.

As the gate insulating layer 402 a, a nitride insulating layer formed by a plasma CVD method, a sputtering method, or the like is preferably used. The thickness of the nitride insulating layer is greater than or equal to 10 nm and less than or equal to 100 nm, typically greater than or equal to 20 nm and less than or equal to 50 nm. For example, a silicon nitride film, a silicon nitride oxide film, or the like can be given. With use of a nitride insulating layer as the gate insulating layer 402 a in contact with the gate electrode layer 401 and the substrate 400, an effect of preventing impurities from diffusing from the gate electrode layer 401 or the substrate 400 can be obtained.

As the gate insulating layer 402 a, it is possible to use a metal oxide insulating film containing one or more elements selected from metal elements such as aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), hafnium (Hf), tantalum (Ta), lanthanum (La), zirconium (Zr), nickel (Ni), magnesium (Mg), and barium (Ba) (e.g., an aluminum oxide film, an aluminum oxynitride film, a hafnium oxide film, a magnesium oxide film, a zirconium oxide film, a lanthanum oxide film, or a barium oxide film) or a metal nitride insulating film containing any of these metal elements as its component (e.g., an aluminum nitride film or an aluminum nitride oxide film). Alternatively, as the gate insulating layer 402 a, a gallium oxide film, an In—Zr—Zn-based oxide film, an In—Fe—Zn-based oxide film, an In—Ce—Zn-based oxide film, or the like can be used.

In this embodiment, as the gate insulating layer 402 a, a 30-nm-thick silicon nitride film which is formed by a plasma-enhanced CVD method is used. As a gas used for depositing the silicon nitride film, a mixed gas of silane (SiH₄) and nitrogen, a mixed gas of silane, nitrogen, and ammonia (NH₃), or the like can be used.

The gate insulating layer 402 b can be formed using a silicon oxide film, a gallium oxide film, an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxynitride film, or a silicon nitride oxide film. The thickness of the gate insulating layer 402 b can be greater than or equal to 100 nm and less than or equal to 350 nm.

Alternatively, the gate insulating layer 402 b can be formed using a high-k material such as hafnium oxide, yttrium oxide, hafnium silicate (HfSi_(x)O_(y) (x>0, y>0)), hafnium silicate to which nitrogen is added (HfSiO_(x)N_(y) (x>0, y>0)), hafnium aluminate (HfAl_(x)O_(y) (x>0, y>0)), or lanthanum oxide, whereby gate leakage current can be reduced.

In this embodiment, a 200-nm-thick silicon oxynitride film is formed by a plasma CVD method. The deposition cycle in the case of using a CVD method can be made shorter than that of the case of using a sputtering method. In addition, in the case of using a CVD method, variation in film quality of the deposited plane is small and particles are less likely to enter the silicon oxynitride film, as compared with the case of using a sputtering method. Thus, in the case where the substrate has a large size, a CVD method is preferably used for deposition of the gate insulating layer 402.

Note that since the gate insulating layer 402 b is an insulating layer in contact with the oxide semiconductor layer 403, it is preferable to contain oxygen and also preferable to contain impurities such as water or hydrogen as little as possible. In the case of using a plasma CVD method, it is more difficult to reduce the concentration of hydrogen in the layer than the case of using a sputtering method. Thus, in this embodiment, heat treatment for reducing (preferably, removing) hydrogen atoms (the treatment is dehydration or dehydrogenation treatment) is performed on the deposited gate insulating layer 402.

The heat treatment is performed at a temperature e higher than or equal to 250° C. and lower than or equal to 650° C., preferably higher than or equal to 450° C. and lower than or equal to 600° C. or lower than the strain point of the substrate. For example, the substrate is introduced into an electric furnace which is one of heat treatment apparatuses, and heat treatment is performed on the gate insulating layer 402 at 650° C. for one hour in vacuum (under reduced pressure).

Note that the heat treatment apparatus is not limited to the electric furnace, and an apparatus for heating an object by heat conduction or heat radiation from a heater such as a resistance heater may be used. For example, an RTA (rapid thermal anneal) apparatus such as a GRTA (gas rapid thermal anneal) apparatus or an LRTA (lamp rapid thermal anneal) apparatus can be used. An LRTA apparatus is an apparatus for heating an object to be processed by radiation of light (an electromagnetic wave) emitted from a lamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp. A GRTA apparatus is an apparatus for performing heat treatment using a high-temperature gas. As the high temperature gas, an inert gas which does not react with an object by heat treatment, such as nitrogen or a rare gas like argon, is used. Note that in the case where a GRTA apparatus is used as the heat treatment apparatus, the substrate may be heated in an inert gas heated to a high temperature of 650° C. to 700° C. because the heat treatment time is short.

The heat treatment may be performed in an atmosphere of nitrogen, oxygen, ultra-dry air (air in which a water content is 20 ppm or less, preferably 1 ppm or less, further preferably 10 ppb or less), or a rare gas (argon, helium, or the like). Note that it is preferable that water, hydrogen, or the like be not contained in the atmosphere of nitrogen, oxygen, ultra-dry air, or a rare gas. It is also preferable that the purity of nitrogen, oxygen, or the rare gas which is introduced into a heat treatment apparatus be set to be 6N (99.9999%) or higher, preferably 7N (99.99999%) or higher (that is, the impurity concentration is 1 ppm or lower, preferably 0.1 ppm or lower).

With the heat treatment, the gate insulating layer 402 can be dehydrated or dehydrogenated, whereby the gate insulating layer 402 from which impurities such as hydrogen or water, which cause a change in characteristics of a transistor, are removed can be formed.

In heating treatment where dehydration or dehydrogenation treatment is performed, it is preferable that a surface of the gate insulating layer 402 be not in a state where hydrogen, water, or the like is prevented from being released (for example, by providing a film or the like which is not permeable to (or blocks) hydrogen, water, or the like), but in a state where the surface of the gate insulating layer 402 is exposed.

The heat treatment for dehydration or dehydrogenation may be performed plural times, and may also serve as another heat treatment.

Next, an oxide semiconductor layer is deposited over the gate insulating layer 402 and then processed into an island shape to form the oxide semiconductor layer 403 (see FIG. 2B).

Note that it is preferable that the gate insulating layer 402 and the oxide semiconductor layer be formed successively without exposing the gate insulating layer 402 to air. The successive formation of the gate insulating layer 402 and the oxide semiconductor layer without exposing the gate insulating layer 402 to air can prevent impurities such as hydrogen and moisture from adsorbing onto the surface of the gate insulating layer 402.

Further, after the oxide semiconductor layer is formed, heat treatment for reducing or removing excess hydrogen (including water and a hydroxyl group) in the oxide semiconductor layer (dehydration or dehydrogenation) is preferably performed. The temperature of the heat treatment is higher than or equal to 300° C. and lower than or equal to 700° C., or lower than the strain point of the substrate. The heat treatment can be performed under reduced pressure or in a nitrogen atmosphere, or the like.

The heat treatment enables hydrogen, which is an impurity imparting n-type conductivity, in the oxide semiconductor layer to be reduced (further preferably removed). Further, in the case where an insulating layer containing oxygen is employed as the gate insulating layer 402, by this heat treatment, oxygen contained in the gate insulating layer 402 can be supplied to the oxide semiconductor layer. While oxygen is released from the oxide semiconductor layer by the dehydration or dehydrogenation treatment, oxygen is supplied from the gate insulating layer 402 to the oxide semiconductor layer, whereby oxygen vacancies in the oxide semiconductor layer can be filled.

Note that in the case where an insulating layer containing oxygen is employed as the gate insulating layer 402, it is preferable that heat treatment for dehydration or dehydrogenation of the oxide semiconductor layer be performed before the oxide semiconductor layer is processed into the island-shaped oxide semiconductor layer 403. This is because oxygen contained in the gate insulating layer 402 can be prevented from being released by the heat treatment.

The heat treatment for dehydration or dehydrogenation may serve as another heat treatment in a manufacturing process of the transistor 420.

In the heat treatment, it is preferable that water, hydrogen, or the like be not contained in nitrogen or a rare gas such as helium, neon, or argon. The purity of nitrogen or the rare gas such as helium, neon, or argon which is introduced into the heat treatment apparatus is set to preferably 6N (99.9999%) or higher, further preferably 7N (99.99999%) or higher (that is, the impurity concentration is preferably 1 ppm or lower, further preferably 0.1 ppm or lower).

In addition, after the oxide semiconductor layer is heated in the heat treatment, a high-purity oxygen gas, a high-purity dinitrogen monoxide gas, or ultra dry air (the moisture amount is less than or equal to 20 ppm (−55° C. by conversion into a dew point), preferably less than or equal to 1 ppm, further preferably less than or equal to 10 ppb, in the measurement with use of a dew point meter of a cavity ring down laser spectroscopy (CRDS) system) may be introduced into the same furnace while the heating temperature is maintained or slow cooling is performed to lower the temperature from the heating temperature. It is preferable that water, hydrogen, or the like be not contained in the oxygen gas or the dinitrogen monoxide gas. The purity of the oxygen gas or the dinitrogen monoxide gas which is introduced into the heat treatment apparatus is preferably 6N or higher, further preferably 7N or higher (i.e., the impurity concentration in the oxygen gas or the dinitrogen monoxide gas is preferably 1 ppm or lower, further preferably 0.1 ppm or lower). The oxygen gas or the dinitrogen monoxide gas acts to supply oxygen that is a main component of the oxide semiconductor and that has been reduced by the step of removing an impurity for the dehydration or dehydrogenation, so that the oxide semiconductor layer can have high purity and be an i-type (intrinsic) oxide semiconductor layer.

The oxide semiconductor layer 403 may have either a single-layer structure or a stacked structure. Further, the oxide semiconductor layer may have either an amorphous structure or a crystalline structure. In the case where the oxide semiconductor layer 403 has an amorphous structure, heat treatment may be performed on the oxide semiconductor layer 403 in a later manufacturing step so that the oxide semiconductor layer has crystallinity. The heat treatment for crystallizing the amorphous oxide semiconductor layer is performed at a temperature higher than or equal to 250° C. and lower than or equal to 700° C., preferably higher than or equal to 400° C., further preferably higher than or equal to 500° C., and still further preferably higher than or equal to 550° C. Note that the heat treatment can also serve as another heat treatment in the manufacturing process.

As a method for forming the oxide semiconductor layer, a sputtering method, a molecular beam epitaxy (MBE) method, a chemical vapor deposition (CVD) method, a pulse laser deposition method, an atomic layer deposition (ALD) method, or the like can be used as appropriate. The oxide semiconductor layer may be formed with a sputtering apparatus which performs deposition in the state where surfaces of a plurality of substrates are substantially perpendicular to a sputtering target surface.

In the formation of the oxide semiconductor layer, the hydrogen concentration in the oxide semiconductor layer is preferably reduced as much as possible. In order to reduce the hydrogen concentration, for example, in the case where a sputtering method is used for the deposition, a high-purity rare gas (typically, argon) from which impurities such as hydrogen, water, a hydroxyl group, and a hydride have been removed; oxygen; or a mixed gas of oxygen and the rare gas is used as appropriate as an atmosphere gas supplied to a deposition chamber of a sputtering apparatus.

The oxide semiconductor layer is formed in such a manner that a sputtering gas from which hydrogen and moisture are removed is introduced into a deposition chamber while moisture remaining in the deposition chamber is removed, whereby the concentration of hydrogen in the oxide semiconductor layer can be reduced. In order to remove moisture remaining in the deposition chamber, an entrapment vacuum pump such as a cryopump, an ion pump, or a titanium sublimation pump is preferably used. The evacuation unit may be a turbo molecular pump provided with a cold trap. When the deposition chamber is evacuated with the cryopump, which has a high capability in removing a hydrogen molecule, a compound containing a hydrogen atom such as water (H₂O) (more preferably, also a compound containing a carbon atom), and the like, the impurity concentration in the oxide semiconductor layer formed in the deposition chamber can be reduced.

Further, when the oxide semiconductor layer is formed by a sputtering method, the relative density (filling rate) of a metal oxide target that is used for the deposition is greater than or equal to 90% and less than or equal to 100%, preferably greater than or equal to 95% and less than or equal to 99.9%. With use of a metal oxide target with a high relative density, a dense oxide semiconductor layer can be deposited.

Further, for reducing the impurity concentration in the oxide semiconductor layer, it is also effective to form the oxide semiconductor layer while the substrate 400 is kept at high temperature. The temperature at which the substrate 400 is heated may be higher than or equal to 150° C. and lower than or equal to 450° C.; the substrate temperature is preferably higher than or equal to 200° C. and lower than or equal to 350° C. By heating the substrate at a high temperature in the formation, the crystalline oxide semiconductor layer can be formed.

An oxide semiconductor used for the oxide semiconductor layer 403 preferably contains at least indium (In) or zinc (Zn). In particular, both In and Zn are preferably contained. As a stabilizer for reducing variation in electric characteristics of a transistor using the oxide semiconductor, gallium (Ga) is preferably additionally contained. Tin (Sn) is preferably contained as a stabilizer. Hafnium (Hf) is preferably contained as a stabilizer. Aluminum (Al) is preferably contained as a stabilizer. Zirconium (Zr) is preferably contained as a stabilizer.

As another stabilizer, one or plural kinds of lanthanoid such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu) may be contained.

As the oxide semiconductor, for example, an indium oxide, a tin oxide, a zinc oxide, a two-component metal oxide such as an In—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or an In—Ga-based oxide, a three-component metal oxide such as an In—Ga—Zn-based oxide (also referred to as IGZO), an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, a Sn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, an In—Er—Zn-based oxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide, or an In—Lu—Zn-based oxide, a four-component metal oxide such as an In—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, an In—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, an In—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide can be used.

Note that here, for example, an “In—Ga—Zn-based oxide” means an oxide containing In, Ga, and Zn as its main component and there is no particular limitation on the ratio of In:Ga:Zn. The In—Ga—Zn-based oxide may contain a metal element other than the In, Ga, and Zn.

Alternatively, a material represented by InMO₃(ZnO)_(m) (m>0 is satisfied, and m is not an integer) may be used as an oxide semiconductor. Note that M represents one or more metal elements selected from Ga, Fe, Mn, and Co. Alternatively, as the oxide semiconductor, a material expressed by a chemical formula, In₂SnO₅(ZnO)_(n) (n>0, n is a natural number) may be used.

For example, an In—Ga—Zn-based oxide with an atomic ratio of In:Ga:Zn=1:1:1 (=⅓:⅓:⅓), In:Ga:Zn=2:2:1 (=⅖:⅖:⅕), In:Ga:Zn=3:1:2 (=½:⅙:⅓), or any of oxides whose composition is in the neighborhood of the above compositions can be used. Alternatively, an In—Sn—Zn-based oxide with an atomic ratio of In:Sn:Zn=1:1:1 (=⅓:⅓:⅓), In:Sn:Zn=2:1:3 (=⅓:⅙:½), or In:Sn:Zn=2:1:5 (=¼:⅛:⅝), or any of oxides whose composition is in the neighborhood of the above compositions may be used.

However, without limitation on the materials given above, a material with an appropriate composition may be used depending on needed semiconductor characteristics (e.g., mobility, threshold voltage, and variation). In order to obtain the required semiconductor characteristics, it is preferable that the carrier concentration, the impurity concentration, the defect density, the atomic ratio between a metal element and oxygen, the interatomic distance, the density, and the like be set to appropriate values.

For example, high mobility can be obtained relatively easily in the case of using an In—Sn—Zn oxide. However, mobility can be increased by reducing the defect density in a bulk also in the case of using an In—Ga—Zn-based oxide.

Note that for example, the expression “the composition of an oxide containing In, Ga, and Zn at the atomic ratio, In:Ga:Zn=a:b:c (a+b+c=1), is in the neighborhood of the composition of an oxide containing In, Ga, and Zn at the atomic ratio, In:Ga:Zn=A:B:C (A+B+C=1)” means that a, b, and c satisfy the following relation: (a−A)²+(b−B)²+(c−C)²≦r², and r may be 0.05, for example. The same applies to other oxides.

It is preferable to use a high-purity gas from which impurities such as hydrogen, water, a hydroxyl group, or a hydride are removed as a sputtering gas used when the oxide semiconductor layer is formed.

The oxide semiconductor layer 403 is preferably a CAAC-OS (c-axis aligned crystalline oxide semiconductor) film.

The CAAC-OS film is not completely single crystal or completely amorphous. The CAAC-OS film is an oxide semiconductor layer with a crystal-amorphous mixed phase structure where crystal parts and amorphous parts are included in an amorphous phase. Note that in most cases, the crystal part fits inside a cube whose one side is less than 100 nm. From an observation image obtained with a transmission electron microscope (TEM), a boundary between an amorphous part and a crystal part in the CAAC-OS film is not clear. Further, with the TEM, a grain boundary in the CAAC-OS film is not found. Thus, in the CAAC-OS film, a reduction in electron mobility, due to the grain boundary, is suppressed.

In each of the crystal parts included in the CAAC-OS film, a c-axis is aligned in a direction parallel to a normal vector of a surface where the CAAC-OS film is formed or a normal vector of a surface of the CAAC-OS film, triangular or hexagonal atomic arrangement which is seen from the direction perpendicular to the a-b plane is formed, and metal atoms are arranged in a layered manner or metal atoms and oxygen atoms are arranged in a layered manner when seen from the direction perpendicular to the c-axis. Note that, among crystal parts, the directions of the a-axis and the b-axis of one crystal part may be different from those of another crystal part. In this specification, a simple term “perpendicular” includes a range from 85° to 95°. In addition, a simple term “parallel” includes a range from −5° to 5°.

In the CAAC-OS film, distribution of crystal parts is not necessarily uniform. For example, in the formation process of the CAAC-OS film, in the case where crystal growth occurs from a surface side of the oxide semiconductor film, the proportion of crystal parts in the vicinity of the surface of the oxide semiconductor film is higher than that in the vicinity of the surface where the oxide semiconductor film is formed in some cases. Further, when an impurity is added to the CAAC-OS film, the crystal part in a region to which the impurity is added becomes amorphous in some cases.

Since the c-axes of the crystal parts included in the CAAC-OS film are aligned in the direction parallel to a normal vector of a surface where the CAAC-OS film is formed or a normal vector of a surface of the CAAC-OS film, the directions of the c-axes may be different from each other depending on the shape of the CAAC-OS film (the cross-sectional shape of the surface where the CAAC-OS film is formed or the cross-sectional shape of the surface of the CAAC-OS film). Note that when the CAAC-OS film is formed, the direction of c-axis of the crystal part is the direction parallel to a normal vector of the surface where the CAAC-OS film is formed or a normal vector of the surface of the CAAC-OS film. The crystal part is formed by film formation or by performing treatment for crystallization such as heat treatment after film formation.

With use of the CAAC-OS film in a transistor, change in electric characteristics of the transistor due to irradiation with visible light or ultraviolet light is small. Thus, the transistor has high reliability.

In the case where a CAAC-OS film is employed as the oxide semiconductor layer 403, the following three methods can be used for forming the CAAC-OS film as examples. One of methods is to form an oxide semiconductor layer at a film formation temperature higher than or equal to 200° C. and lower than or equal to 450° C., thereby obtaining c-axis alignment substantially perpendicular to a surface. Another method is to form a thin oxide semiconductor layer and then subject the layer to heat treatment performed at a temperature higher than or equal to 200° C. and lower than or equal to 700° C., thereby obtaining c-axis alignment substantially perpendicular to a surface. The other method is to form a first thin oxide semiconductor layer, subject the layer to heat treatment performed at a temperature higher than or equal to 200° C. and lower than or equal to 700° C., and then form a second oxide semiconductor layer, thereby obtaining c-axis alignment substantially perpendicular to a surface.

For example, the CAAC-OS film is formed by a sputtering method with a polycrystalline oxide semiconductor sputtering target. When ions collide with the sputtering target, a crystal region included in the sputtering target may be separated from the target along an a-b plane; in other words, a sputtered particle having a plane parallel to an a-b plane (flat-plate-like sputtered particle or pellet-like sputtered particle) may flake off from the sputtering target. In that case, the flat-plate-like sputtered particle reaches a substrate while maintaining their crystal state, whereby the CAAC-OS film can be formed.

For the deposition of the CAAC-OS film, the following conditions are preferably used.

By reducing the amount of impurities entering the CAAC-OS film during the deposition, the crystal state can be prevented from being broken by the impurities. For example, the concentration of impurities (e.g., hydrogen, water, carbon dioxide, or nitrogen) which exist in the deposition chamber may be reduced. Furthermore, the concentration of impurities in a deposition gas may be reduced. Specifically, a deposition gas whose dew point is −80° C. or lower, preferably −100° C. or lower is used.

By increasing the substrate heating temperature during the deposition, migration of a sputtered particle is likely to occur after the sputtered particle reaches a substrate surface. Specifically, the substrate heating temperature during the deposition is higher than or equal to 100° C. and lower than or equal to 740° C., preferably higher than or equal to 200° C. and lower than or equal to 500° C. By increasing the substrate heating temperature during the deposition, when the flat-plate-like sputtered particle reaches the substrate, migration occurs on the substrate surface, so that a flat plane of the flat-plate-like sputtered particle is attached to the substrate.

Furthermore, it is preferable that the proportion of oxygen in the deposition gas be increased and the power be optimized in order to reduce plasma damage at the deposition. The proportion of oxygen in the deposition gas is 30 vol % or higher, preferably 100 vol %.

As an example of the sputtering target, an In—Ga—Zn—O compound target is described below.

The In—Ga—Zn—O compound target, which is polycrystalline, is made by mixing InO_(X) powder, GaO_(Y) powder, and ZnO_(Z) powder in a predetermined molar ratio, applying pressure, and performing heat treatment at a temperature higher than or equal to 1000° C. and lower than or equal to 1500° C. Note that X, Y, and Z are each a given positive number. Here, the predetermined molar ratio of InO_(X) powder to GaO_(Y) powder and ZnO_(Z) powder is, for example, 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, or 3:1:2. The kinds of powder and the molar ratio for mixing powder may be determined as appropriate depending on the desired sputtering target.

Before the formation of the oxide semiconductor layer, planarization treatment may be performed on the surface on which the oxide semiconductor layer is to be formed. The planarization treatment may be, but not particularly limited to, polishing treatment (such as chemical mechanical polishing (CMP)), dry etching treatment, or plasma treatment.

As plasma treatment, reverse sputtering in which an argon gas is introduced and plasma is generated can be performed. The reverse sputtering is a method in which voltage is applied to a substrate side with use of an RF power source in an argon atmosphere and plasma is generated in the vicinity of the substrate so that a substrate surface is modified. Note that instead of argon, nitrogen, helium, oxygen or the like may be used. The reverse sputtering can remove particle substances (also referred to as particles or dust) attached to the surface on which the oxide semiconductor layer is to be formed.

As the planarization treatment, polishing treatment, dry etching treatment, or plasma treatment may be performed plural times, or these treatments may be performed in combination. In the case where the treatments are combined, the order of steps may be set as appropriate, without particular limitation, depending on the unevenness of the surface on which the oxide semiconductor layer is to be formed.

Next, a conductive film that is to be a source electrode layer and a drain electrode layer (including a wiring formed in the same layer as the source electrode layer and the drain electrode layer) is formed over the gate electrode layer 401, the gate insulating layer 402 and the oxide semiconductor layer 403. The thickness of the conductive film can be, for example, greater than or equal to 20 nm and less than or equal to 50 nm.

The conductive film is formed using a material that can withstand heat treatment in a later step and can have either a single-layer structure or a stacked structure. As a conductive film used for the source electrode layer and the drain electrode layer, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W and a metal nitride film containing any of the above elements as its main component (a titanium nitride film, a molybdenum nitride film, and a tungsten nitride film) can be used. Alternatively, a film of a high-melting-point metal such as Ti, Mo, or W or a metal nitride film of any of these elements (a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) may be stacked on one of or both a bottom side and a top side of a metal film of Al, Cu, or the like. Alternatively, the conductive film used for the source electrode layer and the drain electrode layer may be formed using a conductive metal oxide. Examples of the conductive metal oxide are indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), indium oxide-tin oxide (In₂O₃—SnO₂: abbreviated to ITO), indium oxide-zinc oxide (In₂O₃—ZnO), or any of these metal oxide materials in which silicon oxide is contained.

Through a photolithography step, a resist mask is formed over the conductive film, and the source electrode layer 405 a and the drain electrode layer 405 b are formed by selective etching.

Note that it is preferable that etching conditions be optimized so as not to etch and divide the oxide semiconductor layer 403 when the conductive film is etched. However, it is difficult to obtain etching conditions in which only the conductive film is etched and the oxide semiconductor layer 403 is not etched at all. In some cases, only part of the oxide semiconductor layer 403 is etched to be an oxide semiconductor layer having a groove portion (a recessed portion) when the conductive film is etched.

Next, over the source electrode layer 405 a and the drain electrode layer 405 b, an insulating layer 426 which is in contact with the oxide semiconductor film 403 is formed.

The insulating layer 426 in contact with the oxide semiconductor layer 403 can be formed by a plasma CVD method or a sputtering method, using a silicon oxide film, a gallium oxide film, an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxynitride film, or a silicon nitride oxide film. The preferable thickness of the insulating layer 426 is greater than or equal to 50 nm and less than or equal to 100 nm.

Note that as the insulating layer 426, an oxide insulating film containing nitrogen (e.g., a silicon oxide film containing nitrogen or an aluminum oxide film containing nitrogen) or the like can be used. The concentration of nitrogen contained in the oxide insulating film may be higher than or equal to 0.01 at. %, preferably higher than or equal to 0.1 at. % and lower than or equal to 50 at. %, further preferably higher than or equal to 0.5 at. % and lower than or equal to 15 at. %. Such a silicon oxide film containing nitrogen with the above concentration may be referred to as a silicon oxynitride film. By adjusting the amount of nitrogen contained in the oxide insulating film, oxygen in excess of the stoichiometric composition can be contained.

In this embodiment, as the insulating layer 426, a silicon oxynitride film is formed by a plasma CVD method to be over and in contact with the oxide semiconductor layer 403. The deposition conditions of the insulating layer 426 can be favorably as follows: the gas flow rate ratio of SiH₄ to N₂O is 30 sccm:4000 sccm; the pressure is 200 Pa; the RF power supply (power supply output) is 150 W; and the substrate temperature is 220° C.±15° C.

Note that like the gate insulating layer 402 b, the insulating layer 426 preferably contains impurities such as water or hydrogen as little as possible because it is an insulating layer in contact with the oxide semiconductor layer 403. Thus, in this embodiment, after formation of the insulating layer 426, heat treatment for removing hydrogen atoms (dehydration or dehydrogenation) is performed thereon. Note that the heat treatment for dehydration or dehydrogenation of the insulating layer 426 is preferably performed after the insulating layer 426 is formed and before an aluminum film is formed because the aluminum oxide film has a blocking function of preventing penetration of hydrogen, water, or the like therethrough.

The heat treatment is performed at a temperature higher than or equal to 250° C. and lower than or equal to 650° C., preferably higher than or equal to 450° C. and lower than or equal to 600° C. or lower than the strain point of the substrate. The details of heat treatment for dehydration or dehydrogenation are the same as those of the gate insulating layer 402 b.

Next, a metal film 427 is formed over the insulating layer 426. In this embodiment, as the metal film 427, an aluminum film is formed (see FIG. 2C).

The metal film 427 is preferably deposited by a sputtering method, an evaporation method, a CVD method, or the like. The preferable thickness of the metal film 427 is greater than or equal to 3 nm and less than or equal to 10 nm. In this embodiment, a 5-nm-thick aluminum film is formed.

When the metal film 427 formed over the insulating layer 426 is doped with oxygen in a later step, the metal oxide film 417 is formed, which functions as a barrier film in the transistor. As the metal oxide film 417, a film having barrier properties, i.e., having a high shielding effect (blocking effect) of preventing penetration of both oxygen and impurities such as hydrogen or moisture, can be used. Further, the metal film 427 that is to be a metal oxide film can be formed using an aluminum film, an aluminum film to which magnesium is added, an aluminum film to which titanium is added, a stacked film of an aluminum film and a magnesium film, a stacked film of an aluminum film and a titanium film, a stacked film of an aluminum film and a nickel film, a stacked film of an aluminum film and a molybdenum film, a stacked film of an aluminum film and a tungsten film, or the like.

Next, treatment for introducing oxygen 454 (also referred to as oxygen doping treatment or oxygen implantation treatment) is performed on the insulating layer 426 which has been subjected to the dehydration or dehydrogenation treatment and the metal film 427. As a result, the insulating layer 416 including an oxygen excess region and the metal oxide film 417 which is an oxide of the metal film 427 are formed (see FIG. 2D).

Note that the metal oxide film 417 formed by the oxygen doping treatment does not need to contain oxygen equivalent to the stoichiometric composition and may have some conductivity. For example, in the case where the composition of the aluminum oxide film is represented by Al₂O_(x), x is preferably greater than or equal to 1 and less than or equal to 3.5. Further, in the case where the metal oxide film 417 has conductivity, the resistivity ρ is preferably greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹ Ωm, further preferably greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁸ Ωm, still further preferably greater than or equal to 1×10¹¹ Ωm and less than or equal to 1×10¹⁵ Ωm. When the metal oxide film 417 has resistivity in the above range, the transistor 420 can be prevented from being damaged by electrostatic discharge.

In the insulating layer 416, an oxygen excess region is not necessarily formed entirely in the thickness direction. FIG. 2E is an enlarged view of a region 200 in FIG. 2D. As illustrated in FIG. 2E, in the insulating layer 416 including an oxygen excess region, a region 416 a in which the oxygen 454 is introduced is formed in the vicinity of the interface with the metal oxide film 417. When the insulating layer 416 at least partly includes an oxygen excess region, oxygen can be supplied to the oxide semiconductor layer by solid-phase diffusion due to heat treatment performed in the manufacturing process of the transistor.

The oxygen 454 contains at least any of an oxygen radical, ozone, an oxygen atom, and an oxygen ion (an oxygen molecular ion and/or an oxygen cluster ion). By the oxygen doping treatment performed on the dehydrated or dehydrogenated insulating layer, oxygen can be contained in the insulating layer to compensate for oxygen which has been potentially released by the above heat treatment, and an oxygen excess region can be formed.

Introducing the oxygen 454 into the insulating layer 426 and the metal film 427 can be performed by, for example, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, plasma treatment, or the like. Note that for the ion implantation method, a gas cluster ion beam may be used. The oxygen 454 may be introduced to the entire area of the substrate 400 at a time. Alternatively, a linear ion beam is used for introducing the oxygen 454. In the case of using the linear ion beam, the substrate or the ion beam is relatively moved (scanned), whereby the oxygen 454 can be introduced into the entire areas of the insulating layer 426 and the aluminum film 427.

As a gas for supplying the oxygen 454, a gas containing oxygen may be used. For example, an O₂ gas, an N₂O gas, a CO₂ gas, a CO gas, a NO₂ gas, or the like can be used. Note that a rare gas (e.g., argon) may be contained in a gas for supplying oxygen.

Further, in the case where an ion implantation method is used for introducing oxygen, the dose of the oxygen 454 is preferably greater than or equal to 1×10¹³ ions/cm² and less than or equal to 5×10¹⁶ ions/cm². The content of oxygen in the insulating layer 416 after the oxygen doping treatment preferably exceeds that of the stoichiometric composition of the insulating layer 416. Further, in the metal oxide film 417, a region containing oxygen in excess of the stoichiometric composition may be formed. Note that such a region containing oxygen in excess of the stoichiometric composition may exist in at least part of the insulating layer 416. The depth at which oxygen is implanted may be adjusted as appropriate by implantation conditions.

In the case where an oxide insulating layer (e.g., a silicon oxynitride film or a silicon oxynitride film) is used as the insulating layer 416, oxygen is one of main components in the oxide insulating layer. Thus, it is difficult to accurately estimate the oxygen concentration in the oxide insulating layer with secondary ion mass spectrometry (SIMS) or the like. In other words, it is difficult to judge whether oxygen is intentionally added to the oxide insulating layer or not. Further, the same can be applied to the case where oxygen contained excessively in the insulating layer 416 is supplied to the oxide semiconductor layer in a later step.

As for oxygen, it is known that oxygen contains isotopes such as ¹⁷O and ¹⁸O and the proportions of ¹⁷O and ¹⁸O in all of the oxygen atoms in nature is about 0.038% and about 0.2%, respectively. That is to say, it is possible to measure the concentrations of these isotopes in the oxide semiconductor layer or the insulating layer in contact with the oxide semiconductor layer by a method such as SIMS; therefore, the oxygen concentration of the oxide semiconductor layer or the insulating layer in contact with the oxide semiconductor layer may be able to be estimated more accurately by measuring the concentrations of these isotopes. Thus, the concentration of the isotope may be measured to determine whether oxygen is intentionally added to the insulating layer in contact with the oxide semiconductor layer.

Note that after the oxygen 454 is added to the insulating layer 426 and the metal film 427, heat treatment may be performed. By this heat treatment, oxygen contained in the insulating layer 416 is supplied to the oxide semiconductor layer 403 to fill oxygen vacancies in the oxide semiconductor layer 403. The temperature of heat treatment can be, for example, higher than or equal to 250° C. and lower than or equal to 600° C., preferably higher than or equal to 300° C. and lower than or equal to 600° C.

Through the above-described steps, the transistor 420 of this embodiment can be formed (see FIG. 2F).

Note that over the transistor 420, the insulating layer 422 and the planarization insulating layer 424 may be formed as protective insulating layers. Since the transistor 420 described in this embodiment includes the thin metal oxide film, the protective insulating layer is formed over the metal oxide film, whereby stress on the metal oxide film can be reduced. Thus, in the transistor 420, damage or deformation of the metal oxide film 417 can be suppressed; accordingly, reliability of the transistor 420 can be improved.

The insulating layer 422 can be formed using a material similar to that of the insulating layer 416. The planarization insulating layer 424 can be formed using a heat-resistant organic material, such as a polyimide resin, an acrylic resin, a polyimide amide resin, a benzocyclobutene resin, a polyamide resin, or an epoxy resin. In addition to such organic materials, a low-dielectric constant material (a low-k material), a siloxane-based resin, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), or the like can be used. The planarization insulating layer may be formed by stacking a plurality of insulating layers formed of any of these materials.

In the transistor including an oxide semiconductor, oxygen is supplied from the insulating layer to the oxide semiconductor layer, whereby the interface state density between the oxide semiconductor layer and the insulating layer can be reduced. As a result, carrier trapping at the interface between the oxide semiconductor layer and the insulating layer, caused by the operation of a transistor or the like, can be suppressed, and thus, a transistor with high reliability can be obtained.

Further, charge is generated due to oxygen vacancies in the oxide semiconductor layer in some cases. In general, some of oxygen vacancies in an oxide semiconductor layer serve as a donor and causes release of an electron which is a carrier. As a result, the threshold voltage of a transistor shifts in the negative direction. When oxygen is sufficiently supplied from the insulating layer to the oxide semiconductor layer so that the oxide semiconductor layer preferably contains excessive oxygen, the density of oxygen vacancies in the oxide semiconductor layer, which cause the negative shift of the threshold voltage, can be reduced.

The excess oxygen contained in the insulating layer 416 is supplied to the oxide semiconductor layer 403 in contact with the insulating layer 416 by heat treatment performed in the process for manufacturing a transistor. Thus, in the transistor 420, an oxygen excess region is formed at the interface between the insulating layer 416 and the oxide semiconductor layer 403 or at least in part of the oxide semiconductor layer 403 (in a bulk). Note that a heat treatment step for supplying oxygen from the insulating layer 416 to the oxide semiconductor layer 403 may be performed.

The insulating layer may be subjected to dehydration or dehydrogenation treatment and/or oxygen doping treatment plural times.

Further, the metal oxide film 417 provided over and in contact with the insulating layer 416 is a film formed by oxidizing the metal film. When the metal oxide film 417 is formed by oxidizing the metal film 427, productivity can be increased as compared with the case where a metal oxide film is deposited by a sputtering method. In addition, the metal film can be oxidized in the same step as oxygen doping treatment performed on the insulating layer 416; thus, the process can be simplified. Therefore, the cost for manufacturing a semiconductor device can be reduced.

Furthermore, after the transistor 420 is formed, heat treatment may be performed in the air at a temperature higher than or equal to 100° C. and lower than or equal to 400° C. This heat treatment may be performed at a fixed heating temperature; alternatively, the following change in the heating temperature may be conducted plural times: the heating temperature is increased from room temperature to a temperature higher than or equal to 100° C. and lower than or equal to 400° C. and then decreased to room temperature. This heat treatment may be performed under a reduced pressure. The heat treatment time can be shortened under the reduced pressure. By this heat treatment, oxygen contained in the insulating layer 416 can be supplied to the oxide semiconductor layer 403, so that reliability of the semiconductor device can be improved.

FIG. 13 shows a connection portion of a gate wiring and a source wiring (or a drain wiring) of the transistor 420 (or a connection portion of wirings provided in the same layers as the respective wirings). In FIG. 13, an electrode layer 491 (including an electrode layer 491 a, an electrode layer 491 b, and an electrode layer 491 c) formed in the same layer as the gate electrode layer 401 and an electrode layer 405 c formed in the same layer as the source electrode layer 405 a or the drain electrode layer 405 b are electrically connected through a contact hole formed in the gate insulating layer 402. This contact hole may be formed after the oxide semiconductor layer 403 is formed and before a conductive film that is to be the source electrode layer 405 a or the drain electrode layer 405 b is formed.

FIGS. 3A to 3C illustrate another structure example of a transistor of this embodiment.

FIG. 3A is a plan view of a transistor 440. FIG. 3B is a cross-sectional view taken along line X2-Y2 in FIG. 3A. FIG. 3C is a cross-sectional view taken along line V2-W2 in FIG. 3A. Note that in FIG. 3A, some components of the transistor 440 (e.g., the metal oxide film 417 and the like) are not illustrated in order to avoid complexity.

The transistor 440 illustrated in FIGS. 3A to 3C includes the gate electrode layer 401 provided over the substrate 400, a gate insulating layer 412 provided over the gate electrode layer 401, the oxide semiconductor layer 403 overlapping with the gate electrode layer 401 with the gate insulating layer 412 interposed therebetween, the source electrode layer 405 a and the drain electrode layer 405 b which are electrically connected to the oxide semiconductor layer 403, the insulating layer 416 which covers the source electrode layer 405 a and the drain electrode layer 405 b and is in contact with the oxide semiconductor layer 403, and the metal oxide film 417 provided over the insulating layer 416.

In the transistor 440, the gate insulating layer 412 in contact with the oxide semiconductor layer 403 is an insulating layer including a region where oxygen is contained in excess of the stoichiometric composition due to oxygen doping treatment. Specifically, in the gate insulating layer 412 having a stacked structure, at least a gate insulating layer 412 b in contact with the oxide semiconductor layer 403 is an insulating layer including a region which contains oxygen in excess of the stoichiometric composition. Note that a gate insulating layer 412 a does not necessarily include an oxygen excess region. However, by oxygen doping treatment on the gate insulating layer 412 b, the gate insulating layer 412 a may be a layer including an oxygen excess region, like the gate insulating layer 412 b. Alternatively, a step for doping the gate insulating layer 412 a with oxygen may be additionally performed.

The details of the oxygen doping treatment on the gate insulating layer 412 are the same as those of the above-described step of introducing the oxygen 454. Note that the oxygen doping treatment on the gate insulating layer 412 is preferably performed after heat treatment for removing hydrogen atoms in the gate insulating layer 412. Addition of oxygen, which is performed after heat treatment, can compensate for oxygen which may be released from the layer by the heat treatment.

Note that the gate insulating layer 412 may be subjected to heat treatment and/or oxygen doping treatment plural times.

Oxygen contained excessively in the gate insulating layer 412 is supplied to the oxide semiconductor layer 403 in contact with the gate insulating layer 412 by heat treatment (corresponding to heating the substrate 400 at the time of depositing the oxide semiconductor layer, the deposition temperature of the insulating layer, or the like, for example) performed in the process for manufacturing a transistor. Thus, in the transistor 440, an oxygen excess region is formed at the interface between the gate insulating layer 412 and the oxide semiconductor layer 403 or at least in part of the oxide semiconductor layer 403 (a bulk). Note that a heating step for supplying oxygen from the gate insulating layer 412 to the oxide semiconductor layer 403 may be performed.

The structure and the manufacturing method of the transistor 420 can be referred to for details of those of the transistor 440.

In the semiconductor device described in this embodiment, an insulating layer provided in contact with the upper surface of the oxide semiconductor layer 403 or insulating layers provided in contact with the upper surface and the lower surface of the oxide semiconductor layer 403 are each a layer including an oxygen excess region formed by being subjected to oxygen doping treatment. Each of the above insulating layers is a film from which impurities such as water or hydrogen are removed as much as possible by dehydration or dehydrogenation treatment. The insulating layer in which the content of water and hydrogen is reduced and the content of oxygen is increased is formed in contact with the oxide semiconductor layer 403, whereby entry of water and hydrogen into the oxide semiconductor layer 403 can be suppressed, and oxygen can be supplied to the oxide semiconductor layer 403.

Thus, an oxygen excess region can be formed in the oxide semiconductor layer 403 and/or at the interface between the oxide semiconductor layer 403 and the insulating layer. With such a structure, the density of oxygen vacancies in the oxide semiconductor layer, which cause a shift of the threshold voltage in the negative direction, can be reduced; accordingly, fluctuation in the threshold voltage of the transistor can be reduced, and a normally-off transistor can be obtained. In addition, the sub-threshold value (S value) of the transistor can be reduced.

Further, in the semiconductor device described in this embodiment, oxygen doping treatment is performed on the insulating layer in contact with the oxide semiconductor layer 403; thus, film quality and/or crystallinity of the oxide semiconductor layer 403 can be more improved than the case where oxygen doping treatment is performed directly on the oxide semiconductor layer 403. In particular, when the oxide semiconductor layer 403 is a CAAC-OS film, crystallinity of the CAAC-OS film might be degraded due to oxygen doping treatment performed on the CAAC-OS film. Therefore, it is effective to employ a method for manufacturing a semiconductor device described in this embodiment.

The methods and structures described in this embodiment can be combined as appropriate with any of the methods and structures described in the other embodiments.

Embodiment 2

In this embodiment, another embodiment of a semiconductor device and a method for manufacturing the semiconductor device will be described with reference to FIGS. 10A to 10C, FIGS. 11A to 11E, and FIGS. 12A and 12B. In this embodiment, a transistor including an oxide semiconductor layer is shown as an example of the semiconductor device.

FIGS. 10A to 10C each show a structure example of a transistor 460. FIG. 10A is a plan view of the transistor 460, FIG. 10B is a cross-sectional view taken along line X3-Y3 in FIG. 10A, and FIG. 10C is a cross-sectional view taken along line V3-W3. In FIG. 10A, some of components of the transistor 460 are omitted to avoid complexity.

The transistor 460 illustrated in FIGS. 10A to 10C is an example of a transistor which is a kind of bottom-gate transistor referred to as a channel-protective transistor (also referred to as a channel-stop transistor) and is also referred to as an inverted-staggered transistor.

As illustrated in FIG. 10B of a cross-sectional view in a channel length direction, a semiconductor device including the transistor 460 includes the gate electrode layer 401 over the substrate 400, the gate insulating layers 402 a and 402 b over the gate electrode layer 401, the oxide semiconductor layer 403, an insulating layer 413, a metal oxide film 447, the source electrode layer 405 a, and the drain electrode layer 405 b.

The transistor 460 described in this embodiment includes the gate insulating layer 402 in which the gate insulating layer 402 a and the gate insulating layer 402 b are stacked in this order over the gate electrode layer 401. However, an embodiment of the present invention is not limited to the above structure, and the gate insulating layer may have a single-layer structure or a stacked structure including three or more layers.

The insulating layer 413 and the metal oxide film 447 are provided over a region of the oxide semiconductor layer 403, which at least includes the channel formation region and overlaps with the gate electrode layer 401, and function as a channel protective film. The insulating layer 413 and the metal oxide film 447 include openings 425 a and 425 b which reach the oxide semiconductor layer 403 and whose inner walls are covered with the source electrode layer 405 a or the drain electrode layer 405 b. Accordingly, the insulating layer 413 and the metal oxide film 447 cover the periphery of the oxide semiconductor layer 403, and thus function also as an interlayer insulating layer. Parasitic capacitance can be reduced by locating, in addition to the gate insulating layer 402, the insulating layer 413 and the metal oxide film 447 as an interlayer insulating layer at the intersection of a gate wiring and a source wiring.

The insulating layer 413 can be formed by etching an insulating film which is formed by a plasma CVD method or a sputtering method. The inner walls of the openings 425 a and 425 b in the insulating layer 413 are tapered.

The cross-sectional shape of the insulating layer 413 which is over and overlaps with the channel formation region, specifically, the cross-sectional shape (e.g., taper angle and thickness) of an end portion of the insulating layer 413 is adjusted, so that electric-field concentration which might occur in the vicinity of an end portion of the drain electrode layer 405 b can be reduced and degradation of the switching characteristics of the transistor 460 can be suppressed.

Specifically, the cross-sectional shape of the insulating layer 413 which is over and overlaps with the channel formation region is set to a trapezoid or a triangle, and the taper angle of a lower end portion of the cross-sectional shape is set to 60° or less, preferably 45° or less, further preferably 30° or less. Setting the taper angle within such a range makes it possible to reduce the electric-field concentration which might occur in the vicinity of the end portion of the drain electrode layer 405 b when a high gate voltage is applied to the gate electrode layer 401.

The thickness of the insulating layer 413 which is over and overlaps with the channel formation region is less than or equal to 0.3 μm, preferably greater than or equal to 5 nm and less than or equal to 0.1 μm. Setting the thickness within such a range makes it possible to reduce the peak of electric-field intensity, or distribute the electric-field concentration so that the electric-field is concentrated in plural portions; consequently reducing the electric-field concentration which might occur in the vicinity of the end portion of the drain electrode layer 405 b.

In the transistor 460 described in this embodiment, the insulating layer 413 in contact with the oxide semiconductor layer 403 has a single-layer structure or a stacked structure and includes a region containing oxygen in excess of the stoichiometric composition. Such a region is formed by oxygen doping treatment. In the case where the insulating layer 413 has a stacked structure, it is preferable that a region containing excess oxygen be included in at least a portion in contact with the oxide semiconductor layer 403.

In this embodiment, as the insulating layer 413, a silicon oxynitride film including an oxygen excess region is used. As the metal oxide film 447, an aluminum oxide film is used.

The metal oxide film 447 provided in contact with the insulating layer 413 is formed by oxidizing a metal film (aluminum film in this embodiment). When the metal oxide film 447 is formed by oxidizing the metal film, productivity can be increased as compared with the case where the metal oxide film 447 is deposited by a sputtering method. Further, oxidization of the metal film can be performed in the same step as oxygen doping treatment performed on the insulating layer 413; thus, a process can be simplified. Therefore, cost for manufacturing a semiconductor device can be reduced.

The aluminum oxide film has a high shielding effect (blocking effect) of preventing penetration of both oxygen and impurities such as hydrogen and moisture. Thus, with use of an aluminum oxide film covering the transistor, release of oxygen from the oxide semiconductor layer 403 and the insulating layer 413 in contact with the oxide semiconductor layer 403 can be prevented, and entry of water and hydrogen into the oxide semiconductor layer 403 can also be prevented.

In particular, in the transistor 460, the periphery of the oxide semiconductor layer 403 is covered with the insulating layer 413 and the aluminum oxide film that is the metal oxide film 447. With such a structure in which the periphery of the oxide semiconductor layer 403 is covered with the insulating layer 413 including an oxygen excess region and the aluminum oxide film with high barrier properties, oxygen is supplied from the insulating layer 413 including an oxygen excess region, and the aluminum oxide film prevents release of the supplied oxygen from the periphery of the oxide semiconductor layer 403.

The metal oxide film 447 preferably has resistivity greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹ Ωm (preferably greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁸ Ωm, further preferably greater than or equal to 1×10¹¹ Ωm and less than or equal to 1×10¹⁵ Ωm). Alternatively, as the metal oxide film 447, a titanium oxide film, a magnesium oxide film, a nickel oxide film, a molybdenum oxide film, or a tungsten oxide film may be stacked over the aluminum oxide film. The titanium oxide film, the magnesium oxide film, the nickel oxide film, the molybdenum oxide film, or the tungsten oxide film preferably has resistivity greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁹ Ωm (preferably greater than or equal to 1×10¹⁰ Ωm and less than or equal to 1×10¹⁸ Ωm, further preferably greater than or equal to 1×10¹¹ Ωm and less than or equal to 1×10¹⁵ Ωm). The stacking order may be changed. The film having resistivity in the above range is provided as the metal oxide film 447, whereby the semiconductor device can be prevented from being damaged by electrostatic discharge

Note that the aluminum oxide film preferably has a high density (film density higher than or equal to 3.2 g/cm³, preferably higher than or equal to 3.6 g/cm³), whereby the transistor 460 can have stable electrical characteristics.

In the case where the composition of the aluminum oxide film is represented by Al₂O_(x), x is preferably greater than or equal to 1 and less than or equal to 3.5.

An example of a method for manufacturing the transistor 460 shown in FIGS. 10A to 10C is described with reference to FIGS. 11A to 11E.

First, the gate electrode layer 401 is formed over the substrate 400 having an insulating surface, and then the gate insulating layer 402 a and the gate insulating layer 402 b are stacked in this order over the gate electrode layer 401, whereby the gate insulating layer 402 is formed, which is similar to the steps described in Embodiment 1.

In this embodiment, as the gate electrode layer 401, a 100-nm-thick tungsten film is formed by a sputtering method.

Further, in this embodiment, a silicon nitride film formed by a plasma CVD method to have a thickness greater than or equal to 10 nm and less than or equal to 100 nm (preferably greater than or equal to 20 nm and less than or equal to 60 nm) is used as the gate insulating layer 402 a. As the deposition gas, a gas containing SiH₄ and N₂ or a gas containing SiH₄, N₂, and NH₃ can be used.

The gate insulating layer 402 b can be formed by a sputtering method, an MBE method, a CVD method, a pulse laser deposition method, an ALD method, or the like to have a thickness greater than or equal to 100 nm and less than or equal to 350 nm. The gate insulating layer 402 b may be formed using a sputtering apparatus which performs film formation with surfaces of a plurality of substrates set substantially perpendicular to a surface of a sputtering target.

In this embodiment, as the gate insulating layer 402 b, a silicon oxynitride film with a thickness of 200 nm is formed by a plasma CVD method, and then the deposited gate insulating layer 402 is subjected to heat treatment for reducing (preferably removing) hydrogen atoms (dehydration or dehydrogenation treatment).

Further, the heat treatment for the dehydration or dehydrogenation may be performed plural times, and may also serve as another heat treatment.

Next, an oxide semiconductor layer is formed over the gate insulating layer 402 and processed into an island shape to form the oxide semiconductor layer 403 (see FIG. 11A). For details, Embodiment 1 can be referred to.

Note that it is preferable that the gate insulating layer 402 and the oxide semiconductor layer be formed successively without exposing the gate insulating layer 402 to air. Further, after deposition of the oxide semiconductor layer, the oxide semiconductor layer is preferably subjected to heat treatment for reducing or removing excess hydrogen (including water and a hydroxyl group) in the oxide semiconductor layer (dehydration or dehydrogenation treatment).

In this embodiment, a 35-nm-thick In—Ga—Zn-based oxide film (IGZO film) is formed as the oxide semiconductor layer 403 by a sputtering method with a sputtering apparatus including an AC power supply device.

Next, an insulating layer 423 is formed over the gate electrode layer 401, the gate insulating layer 402, and the oxide semiconductor layer 403.

The insulating layer 423 can be formed by a plasma CVD method or a sputtering method. The insulating layer 423 can be formed using, typically, a silicon oxide film, a gallium oxide film, an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxynitride film, or a silicon nitride oxide film.

Note that as the insulating layer 423, an oxide insulating film containing nitrogen (e.g., a silicon oxide film containing nitrogen or an aluminum oxide film containing nitrogen) or the like can be used. The concentration of nitrogen contained in the oxide insulating film may be higher than or equal to 0.01 at. %, preferably higher than or equal to 0.1 at. % and lower than or equal to 50 at. %, further preferably higher than or equal to 0.5 at. % and lower than or equal to 15 at. %. Such a silicon oxide film containing nitrogen with the above concentration may be referred to as a silicon oxynitride film. By adjusting an amount of nitrogen contained in the oxide insulating film, oxygen in excess of the stoichiometric composition can be contained.

In this embodiment, as the insulating layer 423, a silicon oxynitride film is formed by a plasma CVD method to be over and in contact with the oxide semiconductor layer 403. The deposition conditions of the insulating layer 423 can be favorably as follows: the gas flow rate ratio of SiH₄ to N₂O is 30 sccm:4000 sccm; the pressure is 200 Pa; the RF power supply (power supply output) is 150 W; and the substrate temperature is 220° C.±15° C. The preferable thickness of the insulating layer 423 is greater than or equal to 50 nm and less than or equal to 100 nm.

It is preferable that heat treatment for dehydration or dehydrogenation be performed on the insulating layer 423.

In this embodiment, even in the case where a gas containing hydrogen is used for depositing the insulating layer 423, hydrogen in the insulating layer 423 can be removed because the insulating layer 423 is subjected to dehydrogenation treatment. Thus, a plasma CVD method can be used. By a plasma CVD method, particles and the like do not easily attach to or enter a film in deposition, and in addition, a thick film can be deposited with relatively high deposition rate; a plasma CVD method is advantageous in productivity.

The temperature of the heat treatment is higher than or equal to 300° C. and lower than or equal to 700° C., or lower than the strain point of the substrate. It is preferable that the temperature of the heat treatment be higher than the deposition temperature of the insulating layer 423, because effect of dehydration or dehydrogenation is high. For example, the substrate is introduced into an electric furnace which is one of heat treatment apparatuses, and the heat treatment is performed on the insulating layer 423 at 450° C. for one hour in a nitrogen atmosphere.

With the heat treatment, the insulating layer 423 can be dehydrated or dehydrogenated, and thus an insulating film from which impurities such as hydrogen or water are removed can be used.

By performing the heat treatment for dehydration or dehydrogenation, impurities such as hydrogen or water included in the insulating layer 423 can be reduced or removed. The insulating layer 423 contains hydrogen as little as possible, so that the transistor 460 has less change in electric characteristics and has stable electric characteristics.

Note that the metal oxide film has a blocking function of preventing penetration of hydrogen, water, or the like. Thus, the heat treatment for dehydration or dehydrogenation of the insulating layer 423 is preferably performed after the insulating layer 423 is formed and before a metal oxide film 457 is formed.

Next, the metal film 457 is formed over the insulating layer 423 (see FIG. 11B).

The metal film 457 is preferably formed by a sputtering method, an evaporation method, a CVD method, or the like. In addition, the thickness of the metal film 457 is preferably greater than or equal to 3 nm and less than or equal to 20 nm (further preferably greater than or equal to 3 nm and less than or equal to 10 nm, still further preferably greater than or equal to 4 nm and less than or equal to 5 nm).

In this embodiment, an aluminum film is formed as the metal film 457. Note that as the aluminum film, an aluminum film to which titanium or magnesium is added may be used. Alternatively, as the metal film 457, a stacked layer of an aluminum film and any of a titanium film, a magnesium film, a nickel film, a molybdenum film, or a tungsten film may be used.

Next, treatment for introducing oxygen 454 (also referred to as oxygen doping treatment or oxygen implantation treatment) is performed on the insulating layer 423 and the metal film 457. As a result, the insulating layer 413 including an oxygen excess region and the metal oxide film 447 (aluminum oxide film in this embodiment) which is an oxide of the metal film 457 (aluminum film in this embodiment) are formed (see FIG. 11C).

The treatment for introducing the oxygen 454 can be performed in a manner similar to that of Embodiment 1. For details, Embodiment 1 can be referred to.

In this embodiment, oxygen is introduced into the insulating layer 413 by oxygen doping treatment, and an example in which a region 413 b in contact with the metal oxide film 447 contains oxygen more than a region 413 a in contact with the oxide semiconductor layer 403 is shown. The oxygen introduced into the region 413 b diffuses (solid-phase diffusion) toward the oxide semiconductor layer 403, thereby being supplied to the oxide semiconductor layer 403. Thus, when oxygen is supplied from the insulating layer 413 to the oxide semiconductor layer 403 by solid-phase diffusion, the oxide semiconductor layer 403 is less damaged by plasma as compared with the case where plasma treatment in which oxygen is directly added to the exposed oxide semiconductor layer 403 is performed.

Note that after the oxygen 454 is added to the insulating layer 423 and the metal oxide film 447, heat treatment may be performed. In this embodiment, by this heat treatment, oxygen included in the insulating layer 413 is supplied to the oxide semiconductor layer 403, so that oxygen vacancies in the oxide semiconductor layer 403 can be filled. This heat treatment may serve as another heat treatment in the process. The temperature of the heat treatment may be higher than or equal to 250° C. and lower than or equal to 600° C., for example, 300° C. By the heat treatment, oxygen in the insulating layer 413 can be supplied to the oxide semiconductor layer 403, so that oxygen vacancies in the oxide semiconductor layer 403 can be filled.

In the transistor including an oxide semiconductor, when oxygen is supplied from the insulating layer to the oxide semiconductor layer, the interface state density between the oxide semiconductor layer and the insulating layer can be reduced. As a result, carrier trapping at the interface between the oxide semiconductor layer and the insulating layer due to the operation of a transistor, or the like can be suppressed, and thus, a transistor with high reliability can be obtained.

Further, charge is generated due to oxygen vacancies in the oxide semiconductor layer in some cases. In general, some of oxygen vacancies in an oxide semiconductor layer serve as a donor and causes release of an electron which is a carrier. As a result, the threshold voltage of a transistor shifts in the negative direction. When oxygen is sufficiently supplied from the insulating layer to the oxide semiconductor layer and the oxide semiconductor layer preferably contains oxygen excessively, the density of oxygen vacancies in the oxide semiconductor layer, which cause the negative shift of the threshold voltage, can be reduced.

The excess oxygen contained in the insulating layer 413 is supplied to the oxide semiconductor layer 403 in contact with the insulating layer 413 by heat treatment performed in the process for manufacturing a transistor. Thus, in the transistor 460, an oxygen excess region is formed at the interface between the insulating layer 413 and the oxide semiconductor layer 403 or at least in part of the oxide semiconductor layer 403 (in a bulk).

The insulating layer may be subjected to dehydration or dehydrogenation treatment and/or oxygen doping treatment plural times.

Further, the metal oxide film 447 provided over and in contact with the insulating layer 413 is a film formed by oxidizing the metal film. When the metal oxide film 447 is formed by oxidizing the metal film, productivity can be increased as compared with the case where a metal oxide film is deposited by a sputtering method. In addition, the metal film can be oxidized in the same step as oxygen doping treatment performed on the insulating layer 413; thus, the process can be simplified. Therefore, the cost for manufacturing a semiconductor device can be reduced.

Next, the insulating layer 413 and the metal oxide film 447 are selectively etched, so that the openings 425 a and 425 b reaching the oxide semiconductor layer 403 is formed (see FIG. 11D).

Next, a conductive film that is to be a source electrode layer and a drain electrode layer is formed over the gate electrode layer 401, the gate insulating layers 402 a and 402 b, the oxide semiconductor layer 403, the insulating layer 413, and the metal oxide film 447.

The conductive film is formed using a material that can withstand heat treatment in a later step. As a conductive film used for the source electrode layer and the drain electrode layer, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W and a metal nitride film containing any of the above elements (a titanium nitride film, a molybdenum nitride film, and a tungsten nitride film) can be used. Alternatively, a film of a high-melting-point metal such as Ti, Mo, or W or a metal nitride film of any of these elements (a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) may be stacked on one of or both a bottom side and a top side of a metal film of Al, Cu, or the like. Alternatively, the conductive film used for the source electrode layer and the drain electrode layer may be formed using a conductive metal oxide. As the conductive metal oxide, indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), indium oxide-tin oxide (In₂O₃—SnO₂), indium oxide-zinc oxide (In₂O₃—ZnO), or any of these metal oxide materials in which silicon oxide is contained can be used.

Through a photolithography step, a resist mask is formed over the conductive film, and the source electrode layer 405 a and the drain electrode layer 405 b are formed by selective etching. After formation of the source electrode layer 405 a and the drain electrode layer 405 b, the resist mask is removed.

Ultraviolet, KrF laser light, ArF laser light, or the like can be used for light exposure at the time of forming a resist mask. The channel length L of the transistor 460 completed later is determined by the distance between a lower edge of the source electrode layer 405 a and a lower edge of the drain electrode layer 405 b, which are adjacent to each other over the oxide semiconductor layer 403. In the case where the channel length L is less than 25 nm, the light exposure at the time of forming the resist mask can be performed using extreme ultraviolet having an extremely short wavelength of several nanometers to several tens of nanometers. In the light exposure by extreme ultraviolet light, the resolution is high and the focus depth is large. Thus, the channel length L of the transistor which is subsequently formed can be longer than or equal to 10 nm and shorter than or equal to 1000 nm and the operation speed of a circuit can be increased.

In order to reduce the number of photomasks used in a photolithography step and reduce the number of photolithography steps, an etching step may be performed with use of a multi-tone mask which is a light-exposure mask through which light is transmitted to have a plurality of intensities. A resist mask formed with use of a multi-tone mask has a plurality of thicknesses and further can be changed in shape by etching; therefore, the resist mask can be used in a plurality of etching steps for processing into different patterns. Therefore, a resist mask corresponding to at least two kinds or more of different patterns can be formed by one multi-tone mask. Thus, the number of light-exposure masks can be reduced and the number of corresponding photolithography steps can be also reduced, whereby simplification of a process can be achieved.

In this embodiment, the conductive film can be etched using a gas containing chlorine, for example, a gas containing chlorine (Cl₂), boron trichloride (BCl₃), silicon tetrachloride (SiCl₄), or carbon tetrachloride (CCl₄). Alternatively, a gas containing fluorine such as a gas containing carbon tetrafluoride (CF₄), sulfur hexafluoride (SF₆), nitrogen trifluoride (NF₃), or trifluoromethane (CHF₃) can be used. Alternatively, any of these gases to which a rare gas such as helium (He) or argon (Ar) is added, or the like can be used.

As the etching method, a parallel plate RIE (reactive ion etching) method or an ICP (inductively coupled plasma) etching method can be used. In order to etch the films into desired shapes, the etching conditions (the amount of electric power applied to a coil-shaped electrode, the amount of electric power applied to an electrode on a substrate side, the temperature of the electrode on the substrate side, or the like) are adjusted as appropriate.

In this embodiment, as the conductive film, a tungsten film with a thickness greater than or equal to 20 nm and less than or equal to 50 nm is formed by a sputtering method. As the etching of the conductive film, the tungsten film is etched by a dry etching method, so that the source electrode layer 405 a and the drain electrode layer 405 b are formed.

Through the above-described steps, the transistor 460 of this embodiment is manufactured (see FIG. 11E).

An insulating film functioning as an interlayer insulating layer (such as a protective insulating film or a planarization insulating film) may be formed over the source electrode layer 405 a and the drain electrode layer 405 b. With the interlayer insulating layer (a protective insulating film or a planarization insulating film), stress on the metal oxide film 447 which is a thin film can be reduced. Thus, the metal oxide film 447 can be prevented from being damaged.

The protective insulating film can be formed using a material and a method similar to those of the insulating layer 413. For example, a silicon oxide film is formed to have a thickness of 400 nm by a sputtering method. Heat treatment may be performed after formation of the protective insulating film. For example, heat treatment is performed at 300° C. for one hour in a nitrogen atmosphere.

In addition, a planarization insulating film may be formed in order to reduce surface unevenness due to the transistor 460. As the planarization insulating film, an organic material such as a polyimide resin, an acrylic resin, or a benzocyclobutene-based resin can be used. Other than such organic materials, it is also possible to use a low-dielectric constant material (a low-k material) or the like. Note that the planarization insulating film may be formed by stacking a plurality of insulating films formed from these materials.

For example, a 1500-nm-thick acrylic resin film may be formed as the planarization insulating film. The acrylic resin film can be formed in such a manner that an acrylic resin is applied by a coating method and then baked (e.g., at 250° C. for one hour in a nitrogen atmosphere).

Heat treatment may be performed after the planarization insulating film is formed. For example, heat treatment is performed at 250° C. for one hour in a nitrogen atmosphere.

As described above, heat treatment may be performed after formation of the transistor 460. Heat treatment may be performed more than once.

FIG. 14 shows a connection portion of a gate wiring and a source wiring (or a drain wiring) of the transistor 460 (or a connection portion of wirings provided in the same layers as the respective wirings). In FIG. 14, an electrode layer 491 formed in the same layer as the gate electrode layer 401 and an electrode layer 405 c formed in the same layer as the source electrode layer 405 a or the drain electrode layer 405 b are electrically connected through a contact hole formed in the gate insulating layer 402, the insulating layer 413, and the metal oxide film 447.

In the case where the contact hole for connecting the electrode layer 491 and the electrode layer 405 c is formed after the metal film 457 is formed and before the oxygen doping treatment is performed, conductivity of the gate wiring and the metal film 457 is high, which might cause electrostatic breakdown in formation of the contact hole. Thus, the contact hole needs to be formed after the oxygen doping treatment is performed on the metal film 457 (that is, after formation of the metal oxide film 447) and before the conductive film that is to be the source electrode layer 405 a or the drain electrode layer 405 b is formed. Further, in order to prevent oxygen from being introduced into the conductive film that is to be the source electrode layer 405 a or the drain electrode layer 405 b, the oxygen doping treatment needs to be performed before formation of the conductive film.

FIGS. 12A and 12B illustrate another structure example of a transistor of this embodiment.

FIG. 12A is a plan view of a transistor 480, and FIG. 12B is a cross-sectional view taken along line X4-Y4 in FIG. 12A. In FIG. 12A, some of components of the transistor 480 are omitted to avoid complexity.

The transistor 480 illustrated in FIGS. 12A and 12B is also an example of a transistor which is a kind of bottom-gate transistor referred to as a channel-protective transistor (also referred to as a channel-stop transistor) and is also referred to as an inverted-staggered transistor.

As illustrated in FIG. 12B of a cross-sectional view in the channel length direction, a semiconductor device including the transistor 480 includes the gate electrode layer 401 over the substrate 400, the gate insulating layers 402 a and 402 b over the gate electrode layer 401, the oxide semiconductor layer 403, an insulating layer 433, a metal oxide film 437, the source electrode layer 405 a, and the drain electrode layer 405 b.

The island-shaped insulating layer 433 and the island-shaped metal oxide film 437 are provided over a region of the oxide semiconductor layer 403, which at least includes the channel formation region and overlaps with the gate electrode layer 401, and function as a channel protective film. In the transistor 480, the insulating layer 433 and the metal oxide film 437 each have an island shape and thus does not cover the peripheral of the oxide semiconductor layer 403.

For details of the other components of the transistor 480 and a manufacturing method thereof, description of the transistor 460 can be referred to.

In the semiconductor device described in this embodiment, an insulating layer provided in contact with the oxide semiconductor layer 403 is a layer including an oxygen excess region formed by being subjected to oxygen doping treatment. The above insulating layer is a film from which impurities such as water or hydrogen are removed as much as possible by dehydration or dehydrogenation treatment. The insulating layer in which the content of water and hydrogen is reduced and the content of oxygen is increased is formed in contact with the oxide semiconductor layer 403, whereby entry of water and hydrogen into the oxide semiconductor layer 403 can be suppressed, and oxygen can be supplied to the oxide semiconductor layer 403.

Thus, an oxygen excess region can be formed in the oxide semiconductor layer 403 and/or at the interface between the oxide semiconductor layer 403 and the insulating layer. With such a structure, the density of oxygen vacancies in the oxide semiconductor layer, which cause a shift of the threshold voltage in the negative direction, can be reduced; accordingly, fluctuation in the threshold voltage of the transistor can be reduced, and a normally-off transistor can be obtained. In addition, the sub-threshold value (S value) of the transistor can be reduced.

Further, in the semiconductor device described in this embodiment, oxygen doping treatment is performed on the insulating layer in contact with the oxide semiconductor layer 403; thus, film quality and/or crystallinity of the oxide semiconductor layer 403 can be more improved than the case where oxygen doping treatment is performed directly on the oxide semiconductor layer 403. In particular, when the oxide semiconductor layer 403 is a CAAC-OS film, crystallinity of the CAAC-OS film might be degraded due to oxygen doping treatment performed on the CAAC-OS film. Therefore, it is effective to employ a method for manufacturing a semiconductor device described in this embodiment.

The methods and structures described in this embodiment can be combined as appropriate with any of the methods and structures described in the other embodiments.

Embodiment 3

A semiconductor device having a display function (also referred to as a display device) can be manufactured using the transistor described in Embodiment 1 or Embodiment 2. Further, part or all of the driver circuits which include the transistor can be formed over a substrate where a pixel portion is formed, whereby a system-on-panel can be formed.

In FIG. 4A, a sealant 4005 is provided so as to surround a pixel portion 4002 provided over a substrate 4001, and the pixel portion 4002 is sealed by the sealant 4005 and a substrate 4006. In FIG. 4A, a scan line driver circuit 4004 and a signal line driver circuit 4003 which are each formed using a single crystal semiconductor film or a polycrystalline semiconductor film over an IC chip or a substrate separately prepared are mounted on the substrate 4001, in a region that is different from the region surrounded by the sealant 4005. A variety of signals and potentials are supplied to the signal line driver circuit 4003 and the scan line driver circuit 4004 each of which is separately formed, and the pixel portion 4002 from flexible printed circuits (FPCs) 4018 a and 4018 b.

In FIGS. 4B and 4C, the sealant 4005 is provided so as to surround the pixel portion 4002 and the scan line driver circuit 4004 which are provided over the substrate 4001. The substrate 4006 is provided over the pixel portion 4002 and the scan line driver circuit 4004. Consequently, the pixel portion 4002 and the scan line driver circuit 4004 are sealed together with a display element, by the substrate 4001, the sealant 4005, and the substrate 4006. In FIGS. 4B and 4C, the signal line driver circuit 4003 which is formed using a single crystal semiconductor film or a polycrystalline semiconductor film over an IC chip or a substrate separately prepared is mounted on the substrate 4001, in a region that is different from the region surrounded by the sealant 4005. In FIGS. 4B and 4C, a variety of signals and potentials are supplied to the signal line driver circuit 4003 that is separately formed, the scan line driver circuit 4004, and the pixel portion 4002 from a FPC 4018.

Although FIGS. 4B and 4C each illustrate an example in which the signal line driver circuit 4003 is formed separately and mounted on the substrate 4001, one embodiment of the present invention is not limited to this structure. The scan line driver circuit may be separately formed and then mounted, or only part of the signal line driver circuit or part of the scan line driver circuit may be separately formed and then mounted.

A connection method of a separately formed driver circuit is not particularly limited; a chip on glass (COG) method, a wire bonding method, a tape carrier package (TCP) method, or the like can be used. FIG. 4A illustrates an example in which the signal line driver circuit 4003 and the scan line driver circuit 4004 are mounted by a COG method. FIG. 4B illustrates an example in which the signal line driver circuit 4003 is mounted by a COG method. FIG. 4C illustrates an example in which the signal line driver circuit 4003 is mounted by a TCP method.

The display device includes, in its category, a panel in which a display element is sealed, and a module in which an IC or the like including a controller is mounted on the panel.

Note that a display device in this specification means an image display device, a display device, or a light source (including a lighting device). Further, the display device also includes the following modules in its category: a module to which a connector such as an FPC or a TCP is attached; a module having a TCP at the tip of which a printed wiring board is provided; and a module in which an integrated circuit (IC) is directly mounted on a display element by a COG method.

The pixel portion and the scan line driver circuit provided over the substrate include a plurality of transistors, and the transistor described in Embodiment 1 or Embodiment 2 can be applied thereto.

As the display element provided in the display device, a liquid crystal element (also referred to as a liquid crystal display element) or a light-emitting element (also referred to as a light-emitting display element) can be used. The light-emitting element includes an element whose luminance is controlled by current or voltage in its category, and specifically includes an inorganic electroluminescent (EL) element, an organic EL element, and the like. Furthermore, a display medium whose contrast is changed by an electric effect, such as electronic ink, can be used.

Embodiments of the semiconductor device will be described with reference to FIGS. 4A to 4C, FIGS. 5A and 5B, and FIGS. 6A and 6B. FIGS. 6A and 6B correspond to the cross-sectional view taken along line M-N in FIG. 4B.

As illustrated in FIGS. 4A to 4C and FIGS. 6A and 6B, the semiconductor device includes a connection terminal electrode 4015 and a terminal electrode 4016. The connection terminal electrode 4015 and the terminal electrode 4016 are electrically connected to a terminal included in the FPC 4018 through an anisotropic conductive layer 4019.

The connection terminal electrode 4015 is formed from the same conductive layer as a first electrode layer 4034. The terminal electrode 4016 is formed from the same conductive layer as a source electrode layer and a drain electrode layer of transistors 4010, and 4011.

The pixel portion 4002 and the scan line driver circuit 4004 provided over the substrate 4001 include a plurality of transistors. FIGS. 6A and 6B illustrates the transistor 4010 included in the pixel portion 4002 and the transistor 4011 included in the scan line driver circuit 4004, as an example. In FIG. 6A, insulating layers 4030 and 4032 are provided over the transistors 4010 and 4011, and in FIG. 6B, an insulating layer 4021 is further provided in addition to the insulating layers 4030 and 4032.

The transistor described in Embodiment 1 or Embodiment 2 can be applied to the transistor 4010, and the transistor 4011. This embodiment shows an example in which a transistor having a structure similar to that of the transistor 420 described in Embodiment 1 is used. The transistors 4010 and 4011 are bottom-gate transistors.

In each of the transistors 4010 and 4011, an insulating layer in which an oxygen excess region is formed by oxygen doping treatment is included as the insulating layer 4030 which is in contact with an oxide semiconductor layer, and a metal oxide film which is formed by oxidation of a metal film by the oxygen doping treatment is includes as the insulating layer 4032 provided over and in contact with the insulating layer 4030. Thus, into the oxide semiconductor layer, impurities such as hydrogen or water, which causes a change in characteristics of the transistors 4010 and 4011, are not included, and oxygen with which oxygen vacancies are filled is supplied. As a result, a change in electric characteristics of the transistors 4010 and 4011 is suppressed. Further, in the transistors 4010 and 4011, the metal oxide film is formed by oxygen doping treatment performed after deposition of the metal film; thus, the transistors 4010 and 4011 are manufactured with high productivity.

Thus, the semiconductor devices including the transistors 4010 and 4011 using an oxide semiconductor layer and having stable electrical characteristics, illustrated in FIGS. 4A to 4C and FIGS. 6A and 6B of this embodiment, can have high reliability.

Moreover, a conductive layer may be provided so as to overlap with a channel formation region of the oxide semiconductor layer of the transistor 4011 for the driver circuit. The conductive layer is provided so as to overlap with the channel formation region of the oxide semiconductor layer, whereby the amount of change in the threshold voltage of the transistor 4011 before and after a bias-temperature stress test (a BT test) can be further reduced. The conductive layer may have either the same potential as or a potential different from that of a gate electrode layer of the transistor 4011, and can function as a second gate electrode layer.

The conductive layer also has a functions of blocking an external electric field, that is, of preventing an external electric field (particularly, of preventing static electricity) from effecting the inside (a circuit portion including a transistor). A blocking function of the conductive layer can prevent a change in electric characteristics of the transistor due to the effect of external electric field such as static electricity.

Each of the transistor 4010 included in the pixel portion 4002 is electrically connected to a display element to form a display panel. There is no particular limitation on the kind of the display element as long as display can be performed, and various kinds of display elements can be employed.

An example of a liquid crystal display device using a liquid crystal element as a display element is shown in FIG. 6A. In FIG. 6A, a liquid crystal element 4013 which is a display element includes a first electrode layer 4034, a second electrode layer 4031, and a liquid crystal layer 4008. Note that insulating layers 4033 and 4038 functioning as alignment films are provided so that the liquid crystal layer 4008 is interposed therebetween. The second electrode layer 4031 is provided on the substrate 4006 side, and the first electrode layer 4034 and the second electrode layer 4031 are stacked with the liquid crystal layer 4008 provided therebetween.

A columnar spacer denoted by reference numeral 4035 is obtained by selective etching of an insulating layer and is provided in order to adjust the thickness of the liquid crystal layer 4008 (a cell gap). Alternatively, a spherical spacer may be used.

In the case where a liquid crystal element is used as the display element, a thermotropic liquid crystal, a low-molecular liquid crystal, a high-molecular liquid crystal, a polymer dispersed liquid crystal, a ferroelectric liquid crystal, an anti-ferroelectric liquid crystal, or the like can be used. Such a liquid crystal material (liquid crystal composition) exhibits a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like depending on conditions.

Alternatively, a liquid crystal composition exhibiting a blue phase for which an alignment film is unnecessary may be used for the liquid crystal layer 4008. In this case, the liquid crystal layer 4008 is in contact with the first electrode layer 4034 and the second electrode layer 4031. A blue phase is one of liquid crystal phases, which is generated just before a cholesteric phase changes into an isotropic phase while temperature of cholesteric liquid crystal is increased. The blue phase can be exhibited using a liquid crystal composition which is a mixture of a liquid crystal and a chiral agent. In order to increase the temperature range where the blue phase is exhibited, a liquid crystal layer may be formed by adding a polymerizable monomer, a polymerization initiator, and the like to a liquid crystal composition exhibiting a blue phase and by performing polymer stabilization treatment. The liquid crystal composition exhibiting a blue phase has a short response time and has optical isotropy, which contributes to the exclusion of the alignment process and reduction of viewing angle dependence. In addition, since an alignment film does not need to be provided and rubbing treatment is unnecessary, electrostatic discharge damage caused by the rubbing treatment can be prevented and defects and damage of the liquid crystal display device can be reduced in the manufacturing process. Thus, productivity of the liquid crystal display device can be increased. A transistor including an oxide semiconductor layer particularly has a possibility that electric characteristics of the transistor may fluctuate significantly by the influence of static electricity and deviate from the designed range. Therefore, it is more effective to use a liquid crystal composition exhibiting a blue phase for the liquid crystal display device including the transistor including an oxide semiconductor layer.

The specific resistivity of the liquid crystal material is greater than or equal to 1×10⁹ Ωcm, preferably greater than or equal to 1×10¹¹ Ωcm, further preferably greater than or equal to 1×10¹² Ωcm. Note that the specific resistivity in this specification is measured at 20° C.

The size of storage capacitor formed in the liquid crystal display device is set considering the leakage current of the transistor provided in the pixel portion or the like so that charge can be held for a predetermined period. The size of the storage capacitor may be set considering the off-state current of a transistor or the like. By using a transistor including an oxide semiconductor layer, which is disclosed in this specification, it is enough to provide a storage capacitor having a capacitance that is ⅓ or less, preferably ⅕ or less of liquid crystal capacitance of each pixel.

In the transistor including an oxide semiconductor layer, which is disclosed in this specification, the amount of current in an off state (off-state current) can be made small. Accordingly, an electric signal such as an image signal can be held for a longer period in the pixel, and a writing interval can be set longer in an on state. Accordingly, frequency of refresh operation can be reduced, which leads to an effect of suppressing power consumption.

The transistor including an oxide semiconductor layer, which is disclosed in this specification, can have relatively high field-effect mobility; thus, the driver circuit can operate at high speed. For example, when such a transistor which can operate at high speed is used for a liquid crystal display device, a switching transistor in a pixel portion and a driver transistor in a driver circuit portion can be formed over one substrate. That is, since a semiconductor device formed using a silicon wafer or the like is not additionally needed as a driver circuit, the number of components of the semiconductor device can be reduced. In addition, by using a transistor which can operate at high speed in a pixel portion, a high-quality image can be provided.

For the liquid crystal display device, a twisted nematic (TN) mode, an in-plane-switching (IPS) mode, a fringe field switching (FFS) mode, an axially symmetric aligned micro-cell (ASM) mode, an optical compensated birefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, or the like can be used.

A normally black liquid crystal display device such as a transmissive liquid crystal display device utilizing a vertical alignment (VA) mode is preferable. Some examples are given as the vertical alignment mode. For example, a multi-domain vertical alignment (MVA) mode, a patterned vertical alignment (PVA) mode, an Advanced Super View (ASV) mode, and the like can be used. Furthermore, this embodiment can be applied to a VA liquid crystal display device. The VA liquid crystal display device has a kind of form in which alignment of liquid crystal molecules of a liquid crystal display panel is controlled. In the VA liquid crystal display device, liquid crystal molecules are aligned in a vertical direction with respect to a panel surface when no voltage is applied. Moreover, it is possible to use a method called domain multiplication or multi-domain design, in which a pixel is divided into some regions (subpixels) and molecules are aligned in different directions in their respective regions.

In the display device, a black matrix (a light-blocking layer), an optical member (an optical substrate) such as a polarizing member, a retardation member, or an anti-reflection member, and the like are provided as appropriate. For example, circular polarization may be obtained by using a polarizing substrate and a retardation substrate. In addition, a backlight, a side light, or the like may be used as a light source.

As a method for display in the pixel portion, a progressive method, an interlace method or the like can be employed. Further, color elements controlled in a pixel at the time of color display are not limited to three colors: R, G, and B (R, G, and B correspond to red, green, and blue, respectively). For example, R, B, and W (W corresponds to white); R, B, and one or more of yellow, cyan, magenta, and the like; or the like can be used. Further, the sizes of display regions may be different between respective dots of color elements. Note that the disclosed invention is not limited to the application to a display device for color display; the disclosed invention can also be applied to a display device for monochrome display.

Alternatively, as the display element included in the display device, a light-emitting element utilizing electroluminescence can be used. Light-emitting elements utilizing electroluminescence are classified according to whether a light-emitting material is an organic compound or an inorganic compound. In general, the former is referred to as an organic EL element, and the latter is referred to as an inorganic EL element.

In an organic EL element, by application of voltage to a light-emitting element, electrons and holes are separately injected from a pair of electrodes into a layer containing a light-emitting organic compound, and current flows. The carriers (electrons and holes) are recombined, and thus, the light-emitting organic compound is excited. The light-emitting organic compound returns to a ground state from the excited state, thereby emitting light. Owing to such a mechanism, this light-emitting element is referred to as a current-excitation light-emitting element. In this embodiment, an organic EL element is used as a light-emitting element.

The inorganic EL elements are classified according to their element structures into a dispersion-type inorganic EL element and a thin-film inorganic EL element. A dispersion-type inorganic EL element has a light-emitting layer where particles of a light-emitting material are dispersed in a binder, and its light emission mechanism is donor-acceptor recombination type light emission that utilizes a donor level and an acceptor level. A thin-film inorganic EL element has a structure where a light-emitting layer is sandwiched between dielectric layers, which are further sandwiched between electrodes, and its light emission mechanism is localized type light emission that utilizes inner-shell electron transition of metal ions. Note that an example of an organic EL element as a light-emitting element is described here.

In order to extract light emitted from the light-emitting element, it is necessary that at least one of a pair of electrodes has a light-transmitting property. A transistor and a light-emitting element are formed over a substrate. The light-emitting element can have a top emission structure in which light emission is extracted through the surface opposite to the substrate; a bottom emission structure in which light emission is extracted through the surface on the substrate side; or a dual emission structure in which light emission is extracted through the surface opposite to the substrate and the surface on the substrate side, and any of these emission structures can be used.

FIGS. 5A and 5B and FIG. 6B illustrate examples of a light-emitting device including a light-emitting element as a display element.

FIG. 5A is a plan view of a light-emitting device, and FIG. 5B is a cross-sectional view taken along dashed-dotted lines S1-T1, S2-T2, and S3-T3 in FIG. 5A. Note that, an electroluminescent layer 542 and a second electrode layer 543 are not illustrated in the plan view in FIG. 5A.

The light-emitting device illustrated in FIGS. 5A and 5B includes, over a substrate 500, a transistor 510, a capacitor 520, and an intersection 530 of wiring layers. The transistor 510 is electrically connected to a light-emitting element 540. Note that FIGS. 5A and 5B illustrate a bottom-emission light-emitting device in which light from the light-emitting element 540 is extracted through the substrate 500.

The transistor described in Embodiment 1 or Embodiment 2 can be applied to the transistor 510. This embodiment shows an example in which a transistor having a structure similar to that of the transistor 420 described in Embodiment 1 is used. The transistor 510 is a bottom-gate transistor.

The transistor 510 includes gate electrode layers 511 a and 511 b, a gate insulating layer 502, an oxide semiconductor layer 512, and conductive layers 513 a and 513 b functioning as a source electrode layer and a drain electrode layer.

In the transistor 510, an insulating layer in which an oxygen excess region is formed by oxygen doping treatment is included as the insulating layer 524 which is in contact with the oxide semiconductor layer 512, and an aluminum oxide film which is formed by oxidation of an aluminum film due to the above oxygen doping treatment is included as an insulating layer 525 which over and is in contact with the insulating layer 524. Thus, into the oxide semiconductor layer 512, impurities such as hydrogen or water, which causes a change in characteristics of the transistor 510, are not included, and oxygen with which oxygen vacancies are filled is supplied. As a result, a change in electric characteristics of the transistor 510 is suppressed. Further, in the transistor 510, the aluminum oxide film is formed by oxygen doping treatment performed after deposition of the aluminum film; thus, the transistor 510 is manufactured with high productivity.

Thus, the semiconductor device including the transistor 510 using the oxide semiconductor layer 512 and having stable electrical characteristics, illustrated in FIGS. 5A and 5B of this embodiment, can have high reliability. Further, such a highly reliable semiconductor device can be manufactured with a high yield, so that high productivity can be achieved.

The capacitor 520 includes conductive layers 521 a and 521 b, the gate insulating layer 502, an oxide semiconductor layer 522, and a conductive layer 523. The gate insulating layer 502 and the oxide semiconductor layer 522 are sandwiched between the conductive layer 523 and the conductive layers 521 a and 521 b, whereby the capacitor is formed.

The intersection 530 of wiring layers is an intersection of a conductive layer 533 and the gate electrode layers 511 a and 511 b. The conductive layer 533 and the gate electrode layers 511 a and 511 b intersect with each other with the gate insulating layer 502 provided therebetween.

In this embodiment, a 30-nm-thick titanium film is used as the gate electrode layer 511 a and the conductive layer 521 a, and a 200-nm-thick copper thin film is used as the gate electrode layer 511 b and the conductive layer 521 b. Thus, the gate electrode layer has a stacked-layer structure of a titanium film and a copper thin film.

A 25-nm-thick IGZO film is used as the oxide semiconductor layers 512 and 522.

An interlayer insulating layer 504 is formed over the transistor 510, the capacitor 520, and the intersection 530 of wiring layers. Over the interlayer insulating layer 504, a color filter layer 505 is provided in a region overlapping with the light-emitting element 540. An insulating layer 506 functioning as a planarization insulating layer is provided over the interlayer insulating layer 504 and the color filter layer 505.

The light-emitting element 540 having a stacked-layer structure in which a first electrode layer 541, the electroluminescent layer 542, and the second electrode layer 543 are stacked in that order is provided over the insulating layer 506. The first electrode layer 541 and the conductive layer 513 a are in contact with each other in an opening formed in the insulating layer 506 and the interlayer insulating layer 504, which reaches the conductive layer 513 a; thus the light-emitting element 540 and the transistor 510 are electrically connected to each other. Note that a partition 507 is provided so as to cover part of the first electrode layer 541 and the opening.

Further, a photosensitive acrylic film having a thickness of 1500 nm and a photosensitive polyimide film having a thickness of 1500 nm can be used as the insulating layer 506 and the partition 507, respectively.

As the color filter layer 505, for example, a chromatic light-transmitting resin can be used. As the chromatic color light-transmitting resin, a photosensitive organic resin or a non-photosensitive organic resin can be used. The photosensitive organic resin is preferably used, in which case the number of resist masks can be reduced, which results in simplification of the process.

Chromatic colors are all colors except achromatic colors such as black, gray, and white. The color filter layer is formed using a material which transmits only light of any of chromatic colors. As chromatic color, red, green, blue, or the like can be used. Alternatively, cyan, magenta, yellow, or the like may also be used. “Transmitting only light of a chromatic color” means that light passing through the color filter layer has a peak at a wavelength of the light of the chromatic color. The thickness of the color filter layer may be adjusted as appropriate in consideration of the relationship between the concentration of the coloring material to be included and the transmittance of light. For example, the color filter layer 505 may have a thickness greater than or equal to 1500 nm and less than or equal to 2000 nm.

In the light-emitting device illustrated in FIG. 6B, a light-emitting element 4513 which is a display element is electrically connected to the transistor 4010 provided in the pixel portion 4002. The light-emitting element 4513 has a stacked-layer structure of the first electrode layer 4034, an electroluminescent layer 4511, and the second electrode layer 4031 but is not limited to this structure. The structure of the light-emitting element 4513 can be changed as appropriate depending on a direction in which light is extracted from the light-emitting element 4513, or the like.

Partitions 4510 and 507 can be formed using an organic insulating material or an inorganic insulating material. It is particularly preferable that the partitions 4510 and 507 be formed using a photosensitive resin material to have openings over the first electrode layers 4034 and 541, respectively. A sidewall of each opening is formed as a tilted surface with continuous curvature.

The electroluminescent layers 4511 and 542 may be formed using either a single layer or a plurality of layers stacked.

A protective film may be formed over the second electrode layer 4031 and the partition 4510 and over the second electrode layer 543 and the partition 507 in order to prevent entry of oxygen, hydrogen, moisture, carbon dioxide, or the like into the light-emitting elements 4513 and 540. As the protective film, a silicon nitride film, a silicon nitride oxide film, a DLC film, or the like can be formed.

Further, the light-emitting elements 4513 and 540 may be covered with respective layers containing an organic compound deposited by an evaporation method so that oxygen, hydrogen, moisture, carbon dioxide, or the like do not enter the light-emitting elements 4513 and 540.

In addition, in a space which is formed with the substrate 4001, the substrate 4006, and the sealant 4005, a filler 4514 is provided and sealed. It is preferable that a panel be packaged (sealed) with a protective film (such as a laminate film or an ultraviolet curable resin film) or a cover material with high air-tightness and little degasification so that the panel is not exposed to the outside air, in this manner.

As the filler 4514, an ultraviolet curable resin or a thermosetting resin can be used as well as an inert gas such as nitrogen or argon. For example, polyvinyl chloride (PVC), an acrylic resin, a polyimide resin, an epoxy resin, a silicone resin, polyvinyl butyral (PVB), or ethylene vinyl acetate (EVA) can be used. For example, nitrogen is used for the filler.

In addition, if needed, an optical film, such as a polarizing plate, a circularly polarizing plate (including an elliptically polarizing plate), a retardation plate (a quarter-wave plate or a half-wave plate), or a color filter, may be provided as appropriate on a light-emitting surface of the light-emitting element. Further, the polarizing plate or the circularly polarizing plate may be provided with an anti-reflection film. For example, anti-glare treatment by which reflected light can be diffused by projections and depressions on the surface so as to reduce the glare can be performed.

Further, an electronic paper in which electronic ink is driven can be provided as the display device. The electronic paper is also referred to as an electrophoretic display device (an electrophoretic display) and is advantageous in that it has the same level of readability as plain paper, it has lower power consumption than other display devices, and it can be made thin and lightweight.

An electrophoretic display device can have various modes. An electrophoretic display device contains a plurality of microcapsules dispersed in a solvent or a solute, each microcapsule containing first particles which are positively charged and second particles which are negatively charged. By applying an electric field to the microcapsules, the particles in the microcapsules move in opposite directions to each other and only the color of the particles gathering on one side is displayed. Note that the first particles and the second particles each contain pigment and do not move without an electric field. Moreover, the first particles and the second particles have different colors (which may be colorless).

Thus, an electrophoretic display device is a display device that utilizes a so-called dielectrophoretic effect by which a substance having a high dielectric constant moves to a high-electric field region.

A solution in which the above microcapsules are dispersed in a solvent is referred to as electronic ink. This electronic ink can be printed on a surface of glass, plastic, cloth, paper, or the like. Furthermore, by using a color filter or particles that have a pigment, color display can also be achieved.

Note that the first particles and the second particles in the microcapsules may each be formed of a single material selected from a conductive material, an insulating material, a semiconductor material, a magnetic material, a liquid crystal material, a ferroelectric material, an electroluminescent material, an electrochromic material, and a magnetophoretic material, or formed of a composite material of any of these materials.

As the electronic paper, a display device using a twisting ball display system can be used. The twisting ball display system refers to a method in which spherical particles each colored in black and white are arranged between a first electrode layer and a second electrode layer which are electrode layers used for a display element, and a potential difference is generated between the first electrode layer and the second electrode layer to control orientation of the spherical particles, so that display is performed.

In FIGS. 4A to 4C, FIGS. 5A and 5B, and FIGS. 6A and 6B, a flexible substrate as well as a glass substrate can be used as any of the substrates 4001 and 500 and the substrate 4006. For example, a light-transmitting plastic substrate, or the like can be used. As plastic, a fiberglass-reinforced plastics (FRP) plate, a polyvinyl fluoride (PVF) film, a polyester film, or an acrylic resin film can be used. In the case where a light-transmitting property is not needed, a metal substrate (metal film) of aluminum, stainless steel, or the like may be used. For example, a sheet with a structure in which an aluminum foil is interposed between PVF films or polyester films can be used.

In this embodiment, as the gate insulating layer 4020 a, a silicon nitride film is used. As the gate insulating layer 4020 b and the insulating layer 4030 which are in contact with the oxide semiconductor layer, a silicon oxynitride film formed by a plasma CVD method is used. The silicon oxynitride film is subjected to heat treatment for dehydration or dehydrogenation and oxygen doping treatment. Further, the insulating layer 4032 is provided over the insulating layer 4030. In this embodiment, as the insulating layer 4032, an aluminum oxide film which is obtained by oxidation of an aluminum film due to oxygen doping treatment is used.

The aluminum oxide film has a high blocking effect of preventing penetration of both oxygen and impurities such as hydrogen or moisture.

Therefore, in and after the manufacturing process, the aluminum oxide film functions as a protective film for preventing entry of impurities such as hydrogen or moisture, which cause a change in electric characteristics of the transistor, and release of oxygen into/from the silicon oxynitride film which has been subjected to the heat treatment for dehydration or dehydrogenation and the oxygen doping treatment.

The insulating layers 4021 and 506 functioning as a planarization insulating layer can be formed using an organic material having heat resistance, such as an acrylic resin, a polyimide resin, a benzocyclobutene-based resin, a polyamide resin, or an epoxy resin. Other than such organic materials, it is also possible to use a low-dielectric constant material (a low-k material), a siloxane-based resin, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), or the like. Note that the insulating layer may be formed by stacking a plurality of insulating layers formed of any of these materials.

There is no particular limitation on the method for forming the insulating layers 4021 and 506, and the following method or tool (equipment) can be used depending on the material: a sputtering method, spin coating, dipping, spray coating, a droplet discharge method (such as an ink-jet method), a printing method (such as screen printing or offset printing), a doctor knife, a roll coater, a curtain coater, a knife coater, or the like.

The display device displays an image by transmitting light from a light source or a display element. Therefore, the substrate and the thin films such as the insulating layer and the conductive layer provided for the pixel portion where light is transmitted have light-transmitting properties with respect to light in the visible-light wavelength range.

The first electrode layer and the second electrode layer (each of which may be called a pixel electrode layer, a common electrode layer, a counter electrode layer, or the like) for applying voltage to the display element may have light-transmitting properties or light-reflecting properties, which depends on the direction in which light is extracted, the position where the electrode layer is provided, the pattern structure of the electrode layer, and the like.

The first electrode layers 4034 and 541 and the second electrode layers 4031 and 543 can be formed using a light-transmitting conductive material such as indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (referred to as ITO), indium zinc oxide, indium tin oxide to which silicon oxide is added, or graphene.

Alternatively, the first electrode layers 4034 and 541 and the second electrode layers 4031 and 543 can be formed using one or more materials selected from metals such as tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag); an alloy of any of these metals; and a nitride of any of these metals.

In this embodiment, since the light-emitting device illustrated in FIGS. 5A and 5B has a bottom-emission structure, the first electrode layer 541 has a light-transmitting property and the second electrode layer 543 has a light-reflecting property. Accordingly, in the case of using a metal film as the first electrode layer 541, the film is preferably thin enough to keep the light-transmitting property; on the other hand, in the case of using a light-transmitting conductive layer as the second electrode layer 543, a conductive layer having a light-reflecting property is preferably stacked thereon.

A conductive composition containing a conductive high molecule (also referred to as a conductive polymer) can be used for the first electrode layers 4034 and 541 and the second electrode layers 4031 and 543. As the conductive high molecule, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or a derivative thereof, polypyrrole or a derivative thereof, polythiophene or a derivative thereof, a copolymer of two or more of aniline, pyrrole, and thiophene or a derivative thereof can be given.

Since the transistor is easily broken owing to static electricity or the like, a protective circuit for protecting the driver circuit is preferably provided. The protective circuit is preferably formed using a nonlinear element.

By using the transistor described in Embodiment 1 or Embodiment 2 as described above, the semiconductor device can have a variety of functions.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

Embodiment 4

A semiconductor device having an image sensor function of reading data on an object can be manufactured using the transistors described in Embodiment 1 or Embodiment 2.

An example of a semiconductor device having an image sensor function is shown in FIG. 7A. FIG. 7A shows an equivalent circuit of a photo sensor, and FIG. 7B is a cross-sectional view illustrating part of the photo sensor.

In a photodiode 602, one electrode is electrically connected to a photodiode reset signal line 658, and the other electrode is electrically connected to a gate of a transistor 640. One of a source and a drain of the transistor 640 is electrically connected to a photo sensor reference signal line 672, and the other of the source and the drain thereof is electrically connected to one of a source and a drain of a transistor 656. A gate of the transistor 656 is electrically connected to a gate signal line 659, and the other of the source and the drain thereof is electrically connected to a photo sensor output signal line 671.

Note that in circuit diagrams in this specification, a transistor using an oxide semiconductor layer is denoted by a symbol “OS” so that it can be identified as a transistor including an oxide semiconductor layer. In FIG. 7A, the transistor 640 and the transistor 656 are each a transistor using an oxide semiconductor layer, to which the transistor described in Embodiment 1 or Embodiment 2 can be applied. This embodiment shows an example in which a transistor having a structure similar to that of the transistor 420 described in Embodiment 1 is used. The transistor 640 is a bottom-gate transistor.

FIG. 7B is a cross-sectional view illustrating the photodiode 602 and the transistor 640 in the photo sensor. The photodiode 602 functioning as a sensor and the transistor 640 are provided over a substrate 601 (element substrate) having an insulating surface. A substrate 613 is provided over the photodiode 602 and the transistor 640 with an adhesive layer 608 interposed therebetween.

An insulating layer 631, an insulating layer 632, an interlayer insulating layer 633, and an interlayer insulating layer 634 are provided over the transistor 640. The photodiode 602 includes an electrode layer 641 b formed over the interlayer insulating layer 633, semiconductor films (a first semiconductor film 606 a, a second semiconductor film 606 b, and a third semiconductor film 606 c stacked over the electrode layer 641 b in this order), an electrode layer 642 which is provided over the interlayer insulating layer 634 and electrically connected to the electrode layer 641 b through the first to third semiconductor films, and an electrode layer 641 a which is provided in the same layer as the electrode layer 641 b and electrically connected to the electrode layer 642.

The electrode layer 641 b is electrically connected to a conductive layer 643 formed over the interlayer insulating layer 634, and the electrode layer 642 is electrically connected to a conductive layer 645 through the electrode layer 641 a. The conductive layer 645 is electrically connected to a gate electrode layer of the transistor 640, and the photodiode 602 is electrically connected to the transistor 640.

Here, a pin photodiode in which a semiconductor film having p-type conductivity type as the first semiconductor film 606 a, a high-resistance semiconductor film (i-type semiconductor film) as the second semiconductor film 606 b, and a semiconductor film having n-type conductivity type as the third semiconductor film 606 c are stacked is illustrated as an example.

The first semiconductor film 606 a is a p-type semiconductor film and can be formed using an amorphous silicon film containing an impurity element imparting p-type conductivity type. The first semiconductor film 606 a is formed by a plasma CVD method with use of a semiconductor source gas containing an impurity element belonging to Group 13 (e.g., boron (B)). As the semiconductor source gas, silane (SiH₄) may be used. Alternatively, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the like may be used. Further alternatively, an amorphous silicon film which does not contain an impurity element may be formed, and then, an impurity element may be introduced to the amorphous silicon film with use of a diffusion method or an ion injecting method. Heating or the like may be conducted after introducing the impurity element by an ion injecting method or the like in order to diffuse the impurity element. In this case, as a method for forming the amorphous silicon film, an LPCVD method, a chemical vapor deposition method, a sputtering method, or the like may be used. The first semiconductor film 606 a is preferably formed to have a thickness greater than or equal to 10 nm and less than or equal to 50 nm.

The second semiconductor film 606 b is an i-type semiconductor film (intrinsic semiconductor film) and is formed using an amorphous silicon film. As for formation of the second semiconductor film 606 b, an amorphous silicon film is formed by a plasma CVD method with use of a semiconductor source gas. As the semiconductor source gas, silane (SiH₄) may be used. Alternatively, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the like may be used. The second semiconductor film 606 b may be formed by an LPCVD method, a vapor deposition method, a sputtering method, or the like. The second semiconductor film 606 b is preferably formed to have a thickness greater than or equal to 200 nm and less than or equal to 1000 nm.

The third semiconductor film 606 c is an n-type semiconductor film and is formed using an amorphous silicon film containing an impurity element imparting n-type conductivity type. The third semiconductor film 606 c is formed by a plasma CVD method with use of a semiconductor source gas containing an impurity element belonging to Group 15 (e.g., phosphorus (P)). As the semiconductor source gas, silane (SiH₄) may be used. Alternatively, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the like may be used. Further alternatively, an amorphous silicon film which does not contain an impurity element may be formed, and then, an impurity element may be introduced to the amorphous silicon film with use of a diffusion method or an ion injecting method. Heating or the like may be conducted after introducing the impurity element by an ion injecting method or the like in order to diffuse the impurity element. In this case, as a method for forming the amorphous silicon film, an LPCVD method, a chemical vapor deposition method, a sputtering method, or the like may be used. The third semiconductor film 606 c is preferably formed to have a thickness greater than or equal to 20 nm and less than or equal to 200 nm.

The first semiconductor film 606 a, the second semiconductor film 606 b, and the third semiconductor film 606 c are not necessarily formed using an amorphous semiconductor, and may be formed using a polycrystalline semiconductor or a microcrystalline semiconductor (semi-amorphous semiconductor: SAS).

In addition, the mobility of holes generated by the photoelectric effect is lower than the mobility of electrons. Therefore, a pin photodiode has better characteristics when a surface on the p-type semiconductor film side is used as a light-receiving plane. Here, an example in which light received by the photodiode 602 from a surface of the substrate 601, over which the pin photodiode is formed, is converted into electric signals is described. Further, light from the semiconductor film having the conductivity type opposite to that of the semiconductor film on the light-receiving plane is disturbance light; therefore, the electrode layer is preferably formed using a light-blocking conductive layer. Note that the n-type semiconductor film side may alternatively be a light-receiving plane.

The insulating layer 631, the insulating layer 632, the interlayer insulating layer 633, and the interlayer insulating layer 634 can be formed using an insulating material by a sputtering method, a plasma CVD method, spin coating, dipping, spray coating, a droplet discharge method (such as an inkjet method), a printing method (such as screen printing or offset printing), or the like depending on the material.

The insulating layer 631 can be formed using an inorganic insulating material to have a single layer or a stacked layer of a silicon oxynitride layer, a silicon nitride oxide layer or the like, for example.

In this embodiment, as the insulating layer 631, a silicon oxynitride film formed by a plasma CVD method is used and subjected to heat treatment for dehydration or dehydrogenation.

In addition, a metal film is formed over the silicon oxynitride film subjected to heat treatment for dehydration or dehydrogenation, and oxygen doping treatment is performed on the silicon oxynitride film and the metal film. By this oxygen doping treatment, a silicon oxide film including an oxygen excess region and a metal oxide film obtained by oxidation of the metal film are formed. In this embodiment, the insulating layer 632 is provided over the insulating layer 631, and an aluminum oxide film is used as the insulating layer 632.

The aluminum oxide film has a high blocking effect of preventing penetration of both oxygen and impurities such as hydrogen or moisture.

Therefore, in and after the manufacturing process, the aluminum oxide film functions as a protective film for preventing entry of impurities such as hydrogen or moisture, which cause a change in electric characteristics of the transistor, and release of oxygen into/from the silicon oxynitride film which has been subjected to the heat treatment for dehydration or dehydrogenation and the oxygen doping treatment.

For reduction of surface roughness, an insulating layer functioning as a planarization insulating layer is preferably used as each of the interlayer insulating layers 633 and 634. The interlayer insulating layers 633 and 634 can be formed using, for example, an organic insulating material having heat resistance, such as a polyimide resin, an acrylic resin, a benzocyclobutene-based resin, a polyamide resin, or an epoxy resin. Other than such organic insulating materials, it is possible to use a single layer or stacked layers of a low-dielectric constant material (a low-k material), a siloxane-based resin, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), or the like.

With detection of light that enters the photodiode 602, data on an object to be detected can be read. Note that a light source such as a backlight can be used at the time of reading data on an object.

In the transistor 640, an insulating layer in which an oxygen excess region is formed by oxygen doping treatment is used as the insulating layer 631 in contact with the oxide semiconductor layer. Thus, oxygen with which oxygen vacancies of the transistor 640 are filled is supplied to the oxide semiconductor layer. As a result, a change in electric characteristics of the transistor 640 is suppressed.

Therefore, a highly reliable semiconductor device including the transistor 640 of this embodiment, which includes the oxide semiconductor layer and has stable electric characteristics, can be provided. Further, such a highly reliable semiconductor device can be manufactured with a high yield, so that high productivity can be achieved.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

Embodiment 5

A semiconductor device disclosed in this specification can be applied to a variety of electronic devices (including game machines). Examples of electronic devices include a television set (also referred to as a television or a television receiver), a monitor of a computer or the like, cameras such as a digital camera and a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproducing device, a game machine (e.g., a pachinko machine or a slot machine), a game console, and the like. Specific examples of such electronic devices are illustrated in FIGS. 8A to 8C and FIGS. 9A to 9C.

FIG. 8A illustrates a table 9000 having a display portion. In the table 9000, a display portion 9003 is incorporated in a housing 9001 and an image can be displayed on the display portion 9003. Note that the housing 9001 is supported by four leg portions 9002. Further, a power cord 9005 for supplying power is provided for the housing 9001.

The semiconductor device described in any of the above embodiments can be used for the display portion 9003, so that the electronic device can have high reliability.

The display portion 9003 has a touch-input function. When a user touches displayed buttons 9004 which are displayed on the display portion 9003 of the table 9000 with his/her finger or the like, the user can carry out operation of the screen and input of information. Further, when the table may be made to communicate with home appliances or control the home appliances, the table 9000 may function as a control device which controls the home appliances by operation on the screen. For example, with use of the semiconductor device having an image sensor described in Embodiment 4, the display portion 9003 can function as a touch panel.

Further, the screen of the display portion 9003 can be placed perpendicular to a floor with a hinge provided for the housing 9001; thus, the table 9000 can also be used as a television device. When a television device having a large screen is set in a small room, an open space is reduced; however, when a display portion is incorporated in a table, a space in the room can be efficiently used.

FIG. 8B illustrates a television set 9100. In the television set 9100, a display portion 9103 is incorporated in a housing 9101 and an image can be displayed on the display portion 9103. Note that the housing 9101 is supported by a stand 9105 here.

The television set 9100 can be operated with an operation switch of the housing 9101 or a separate remote controller 9110. Channels and volume can be controlled with an operation key 9109 of the remote controller 9110 so that an image displayed on the display portion 9103 can be controlled. Furthermore, the remote controller 9110 may be provided with a display portion 9107 for displaying data output from the remote controller 9110.

The television set 9100 illustrated in FIG. 8B is provided with a receiver, a modem, and the like. With use of the receiver, the television set 9100 can receive general TV broadcasts. Moreover, when the television set 9100 is connected to a communication network with or without wires via the modem, one-way (from a sender to a receiver) or two-way (between a sender and a receiver or between receivers) information communication can be performed.

The semiconductor device described in any of the above embodiments can be used in the display portions 9103 and 9107, so that the television set and the remote controller can have high reliability.

FIG. 8C illustrates a computer which includes a main body 9201, a housing 9202, a display portion 9203, a keyboard 9204, an external connection port 9205, a pointing device 9206, and the like.

The semiconductor device described in any of the above embodiments can be used for the display portion 9203, so that the computer can have high reliability.

FIGS. 9A and 9B illustrate a tablet terminal that can be folded. In FIG. 9A, the tablet terminal is opened, and includes a housing 9630, a display portion 9631 a, a display portion 9631 b, a display-mode switching button 9034, a power button 9035, a power-saving-mode switching button 9036, a clip 9033, and an operation button 9038.

The semiconductor device described in any of the above embodiments can be used for the display portion 9631 a and the display portion 9631 b, so that the tablet terminal can have high reliability.

Part of the display portion 9631 a can be a touch panel region 9632 a and data can be input when a displayed operation key 9638 is touched. Note that FIG. 9A shows, as an example, that half of the area of the display portion 9631 a has only a display function and the other half of the area has a touch panel function. However, the structure of the display portion 9631 a is not limited to this, and all the area of the display portion 9631 a may have a touch panel function. For example, all the area of the display portion 9631 a can display keyboard buttons and serve as a touch panel while the display portion 9631 b can be used as a display screen.

Like the display portion 9631 a, part of the display portion 9631 b can be a touch panel region 9632 b. When a finger, a stylus, or the like touches the place where a button 9639 for switching to keyboard display is displayed in the touch panel, keyboard buttons can be displayed on the display portion 9631 b.

Touch input can be performed concurrently on the touch panel regions 9632 a and 9632 b.

The display-mode switching button 9034 allows switching between a landscape mode and a portrait mode, color display and black-and-white display, and the like. With the power-saving-mode switching button 9036, the luminance of display can be optimized in accordance with the amount of external light at the time when the tablet terminal is in use, which is detected with an optical sensor incorporated in the tablet terminal. The tablet terminal may include another detection device such as a sensor for detecting orientation (e.g., a gyroscope or an acceleration sensor) in addition to the optical sensor.

Although the display portion 9631 a and the display portion 9631 b have the same display area in FIG. 9A, an embodiment of the present invention is not limited to this example. The display portion 9631 a and the display portion 9631 b may have different sizes or different display quality. For example, one of them may be a display panel that can display higher-definition images than the other.

FIG. 9B illustrates the tablet terminal folded, which includes the housing 9630, a solar battery 9633, and a charge and discharge control circuit 9634. Note that FIG. 9B shows an example in which the charge and discharge control circuit 9634 includes a battery 9635 and a DCDC converter 9636.

Since the tablet terminal can be folded in two, the housing 9630 can be closed when the tablet terminal is not in use. Thus, the display portions 9631 a and 9631 b can be protected, thereby providing a tablet terminal with high endurance and high reliability for long-term use.

The tablet terminal illustrated in FIGS. 9A and 9B can have other functions such as a function of displaying various kinds of data (e.g., a still image, a moving image, and a text image), a function of displaying a calendar, a date, the time, or the like on the display portion, a touch-input function of operating or editing the data displayed on the display portion by touch input, and a function of controlling processing by various kinds of software (programs).

The solar battery 9633, which is attached on the surface of the tablet terminal, supplies electric power to a touch panel, a display portion, an image signal processor, and the like. The solar battery 9633 can be provided on one or both surfaces of the housing 9630, so that the battery 9635 can be charged efficiently. When a lithium ion battery is used as the battery 9635, there is an advantage of downsizing or the like.

The structure and operation of the charge and discharge control circuit 9634 illustrated in FIG. 9B are described with reference to a block diagram of FIG. 9C. FIG. 9C illustrates the solar battery 9633, the battery 9635, the DCDC converter 9636, a converter 9637, switches SW1 to SW3, and the display portion 9631. The battery 9635, the DCDC converter 9636, the converter 9637, and the switches SW1 to SW3 correspond to the charge and discharge control circuit 9634 in FIG. 9B.

First, an example of operation in the case where power is generated by the solar battery 9633 using external light is described. The voltage of power generated by the solar battery 9633 is raised or lowered by the DCDC converter 9636 so that a voltage for charging the battery 9635 is obtained. When the display portion 9631 is operated with the power from the solar battery 9633, the switch SW1 is turned on and the voltage of the power is raised or lowered by the converter 9637 to a voltage needed for operating the display portion 9631. In addition, when display on the display portion 9631 is not performed, the switch SW1 is turned off and a switch SW2 is turned on so that charge of the battery 9635 may be performed.

Here, the solar battery 9633 is shown as an example of a power generation means; however, there is no particular limitation on a way of charging the battery 9635, and the battery 9635 may be charged with another power generation means such as a piezoelectric element or a thermoelectric conversion element (Peltier element). For example, the battery 9635 may be charged with a non-contact power transmission module which is capable of charging by transmitting and receiving power by wireless (without contact), or another charging means may be used in combination.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

This application is based on Japanese Patent Application serial no. 2011-285446 filed with Japan Patent Office on Dec. 27, 2011 and Japanese Patent Application serial No. 2011-285518 filed with the Japan Patent Office on Dec. 27, 2011, the entire contents of which are hereby incorporated by reference. 

What is claimed is:
 1. A method for manufacturing a semiconductor device comprising the steps of: forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer to overlap with the gate electrode layer with the gate insulating layer interposed therebetween; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an insulating layer over the source electrode layer and the drain electrode layer; forming a metal film over the insulating layer; and adding oxygen to the metal film and the insulating layer so that a metal oxide film having a resistivity greater than or equal to 1×10′ Ωm and less than or equal to 1×10¹⁹ Ωm is formed over the insulating layer.
 2. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of performing a heat treatment on the insulating layer before forming the metal film so that water or hydrogen in the insulating layer is reduced.
 3. The method for manufacturing a semiconductor device according to claim 1, wherein the metal film is an aluminum film, and wherein the metal oxide film is an aluminum oxide film.
 4. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of performing a heat treatment on the insulating layer after adding oxygen to the metal film and the insulating layer so that oxygen is supplied from the insulating layer to the oxide semiconductor layer.
 5. A method for manufacturing a semiconductor device comprising the steps of: forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer to overlap with the gate electrode layer with the gate insulating layer interposed therebetween; forming an insulating layer over and in contact with the oxide semiconductor layer; forming a metal film over the insulating layer; adding oxygen to the metal film and the insulating layer so that a metal oxide film having a resistivity greater than or equal to 1×10′ Ωm and less than or equal to 1×10¹⁹ Ωm is formed over the insulating layer; forming a first opening and a second opening in the insulating layer; and forming a source electrode layer in contact with the oxide semiconductor layer through the first opening and a drain electrode layer in contact with the oxide semiconductor layer through the second opening.
 6. The method for manufacturing a semiconductor device according to claim 5, further comprising the step of performing a heat treatment on the insulating layer before forming the metal film so that water or hydrogen in the insulating layer is reduced.
 7. The method for manufacturing a semiconductor device according to claim 5, wherein the metal film is an aluminum film, and wherein the metal oxide film is an aluminum oxide film.
 8. The method for manufacturing a semiconductor device according to claim 5, further comprising the step of performing a heat treatment on the insulating layer after adding oxygen to the metal film and the insulating layer so that oxygen is supplied from the insulating layer to the oxide semiconductor layer. 